TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘1072F3
‘1082F3
V
DRM
V
- 58
- 66
V
(BO)
V
- 72
- 82
D PACKAGE
(TOP VIEW)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
G
G
G
MDXXAE
NC - No internal connection
q
Planar Passivated Junctions
Low Off-State Current < 10 µA
Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/560 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
I
TSP
A
80
70
60
45
38
50
50
50
35
P PACKAGE
(TOP VIEW)
q
T
G
G
R
1
2
3
4
8
7
6
5
T
G
G
R
MDXXAF
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
SL PACKAGE
(TOP VIEW)
T
1
2
3
MDXXAG
MD1XAA
q
Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
G
R
device symbol
T
R
q
UL Recognized, E132482
description
These dual asymmetrical transient voltage
suppressors are designed for the overvoltage
protection of ICs used for the SLIC (Subscriber
Line Interface Circuit) function. The IC line driver
section is typically powered with 0 V and a
negative supply. The TISP1xxxF3 limits voltages
that exceed these supply rails and is offered in
two voltage variants to match typical negative
supply voltage values.
High voltages can occur on the line as a result of
exposure to lightning strikes and a.c. power
surges. Negative transients are initially limited by
breakdown clamping until the voltage rises to the
SD1XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
breakover level, which causes the device to
crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides.
Positive transients are limited by diode forward
conduction. These protectors are guaranteed to
suppress and withstand the listed international
lightning surges on any terminal pair
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
description (continued)
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and
matched breakover control and are virtually transparent to the system in normal operation
The small-outline 8-pin assignment has been carefully chosen for these devices to maximise the inter-pin
clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand
ratings.
absolute maximum ratings
RATING
Repetitive peak off-state voltage ( 0°C < T
J
<70°C)
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz,
1s
D Package
P Package
SL Package
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
T
J
T
stg
I
TSM
I
TSP
120
80
70
60
50
38
50
50
45
35
4
6
6
250
-40 to +150
-40 to +150
A/µs
°C
°C
A rms
A
‘1072F3
‘1082F3
SYMBOL
V
DRM
VALUE
-58
-66
UNIT
V
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, 25°C (unless otherwise noted)
TISP1072F3
PARAMETER
Repetitive peak off-
state current
Off-state current
Off-state capacitance
TEST CONDITIONS
MIN
TYP
MAX
±10
±10
V
d
= 100 mV
D Package
P Package
SL Package
0.08
0.06
0.02
0.5
0.4
0.3
0.08
0.06
0.02
MIN
TISP1082F3
TYP
MAX
±10
±10
0.5
0.4
0.3
UNIT
I
DRM
I
D
C
off
NOTE
V
D
= ±V
DRM
, 0°C < T
J
<70°C
V
D
= ±50 V
f = 100 kHz,
V
D
= 0
(see Note 4)
µA
µA
pF
pF
pF
4: Further details on capacitance are given in the Applications Information section.
PRODUCT
INFORMATION
2
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
electrical characteristics for the T and G and R and G terminals, 25°C (unless otherwise noted)
TISP1072F3
PARAMETER
Repetitive peak off-
state current
Breakover voltage
age
Breakover current
Peak forward recovery
voltage
Forward voltage
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
TEST CONDITIONS
MIN
TYP
MAX
-10
-72
-78
-0.1
3.3
3
-3
-0.15
-5
-10
V
d
= 100 mV
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
150
65
30
240
104
48
130
55
25
-0.15
-5
-10
240
104
48
-0.6
-0.1
3.3
3
-3
-92
-0.6
MIN
TISP1082F3
TYP
MAX
-10
-82
UNIT
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
FRM
V
F
V
T
I
H
dv/dt
I
D
C
off
NOTE
V
D
= V
DRM
, 0°C < T
J
<70°C
dv/dt = -250 V/ms,
di/dt < -20 A/µs
dv/dt = -250 V/ms,
dv/dt = 1000 V/µs,
di
F
/dt < 20 A/µs
I
T
= 5 A,
I
T
= -5 A,
t
W
= 100 µs
t
W
= 100 µs
R
SOURCE
= 300
Ω
R
SOURCE
= 50
Ω,
R
SOURCE
= 300
Ω
R
SOURCE
= 50
Ω,
µA
V
V
A
V
V
V
A
kV/µs
µA
pF
pF
pF
Impulse breakover volt- dv/dt = -1000 V/µs,
di/dt = +30 mA/ms
Linear voltage ramp
Maximum ramp value < 0.85V
DRM
V
D
= -50 V
f = 100 kHz,
(see Note 5)
Third terminal voltage = 0
5: Further details on capacitance are given in the Applications Information section.
thermal characteristics
PARAMETER
TEST CONDITIONS
P
tot
= 0.8 W, T
A
= 25°C
5 cm
2
, FR4 PCB
D Package
P Package
SL Package
MIN
TYP
MAX
160
100
105
°C/W
UNIT
R
θ
JA
Junction to free air thermal resistance
PRODUCT
INFORMATION
3
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Forward
Conduction
Characteristic
I
TSM
I
F
V
F
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
DRM
I
DRM
V
D
I
D
+v
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAC
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS R AND G OR T AND G
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
DRM
V
(BR)M
I
DRM
V
(BR)
I
(BR)
+v
V
(BO)
I
(BO)
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAA
Figure 2. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS R AND T
PRODUCT
INFORMATION
4
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
R and G, or T and G terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
V
D
= -50 V
Negat ve Breakdown Vo tages - V
80.0
TC1LAF
BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC1LAL
I
(BR)
= 1 mA
V
(BO)
'1082F3
10
I
D
- Off-State Current - µA
1
V
(BR)
70.0
V
(BR)M
'1072F3
V
(BO)
0·1
0·01
60.0
V
(BR)M
V
(BR)
0·001
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
T
J
- Junction Temperature - °C
Figure 3.
Figure 4.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
TC1LAC
FORWARD CURRENT
vs
FORWARD VOLTAGE
100
TC1LAE
25°C
I
T
- On-State Current - A
I
F
- Forward Current - A
150°C
-40°C
10
10
25°C
150°C
1
1
2
3
4
5
6
7 8 9 10
V
T
- On-State Voltage - V
-40°C
1
1
2
3
4
5
6
7 8 9 10
V
F
- Forward Voltage - V
Figure 5.
Figure 6.
PRODUCT
INFORMATION
5
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