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SHD225452

Description
HERMETIC POWER MOSFET P-CHANNEL
CategoryDiscrete semiconductor    The transistor   
File Size58KB,3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

SHD225452 Overview

HERMETIC POWER MOSFET P-CHANNEL

SHD225452 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-XSFM-P3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-XSFM-P3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4102, REV. -
SHD225452
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
œ
-100 Volt, 0.07 Ohm, -34A MOSFET
œ
Fast Switching
œ
Low R
DS (on)
œ
Electrically Equivalent to IRF5210
œ
Add an “S” to the end of the part number for S-100 screening, SHD225452S
œ
Add a “C” to the part number for ceramic seals, SHDC225452
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT T
C
= 25•C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
T
OP
/T
STG
R
thJC
P
D
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
MIN.
-
-
-55
-
-
-100
-
-2.0
10
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
–20
-34
-21
+150
1.0
125
-
0.07
-4.0
-
-25
-250
100
-100
180
25
100
28
150
100
120
-1.6
260
1.8
-
UNITS
Volts
Amps
•C
•C/W
Watts
Volts
W
Volts
S(1/W)
mA
nA
nC
V
GS
=-10V, T
C
= 25•C
V
GS
=-10V, T
C
= 100•C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25•C
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= -250mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= -10V, I
D
= -21A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= -250mA
FORWARD TRANSCONDUCTANCE
V
DS
= -15V, I
DS
= -21A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= Max. Rating, V
GS
= 0V
V
DS
= 0.8xMax. Rating, V
GS
= 0V, T
J
= 125•C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TOTAL GATE CHARGE
V
GS
= -10 V,
GATE TO SOURCE CHARGE
V
DS
= -80 V,
GATE TO DRAIN CHARGE
I
D
= -21A
TURN ON DELAY TIME
V
DD
= -50V,
RISE TIME
I
D
= -21A
TURN OFF DELAY TIME
R
G
= 2.5W
FALL TIME
DIODE FORWARD VOLTAGE
T
j
= 25•C, I
S
= -21A
V
GS
= 0V
REVERSE RECOVERY TIME
T
J
= 25•C,
I
f
= -21A
di
F
/ds = 100A/msec
INPUT CAPACITANCE
V
GS
= 0 V
OUTPUT CAPACITANCE
V
DS
= -25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
nsec
Volts
nsec
mC
pF
-
-
-
-
-
-
2730
824
465
 
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com
 
 
 
 
 
 
 
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