®
STPS20L15D/G
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
FEATURES AND BENEFITS
n
20 A
15 V
125°C
0.33 V
K
K
n
n
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
REVERSE VOLTAGE SUITED TO OR-ing OF 3V,
5V and 12V RAILS
AVALANCHE CAPABILITY SPECIFIED
TO-220AC
STPS20L15D
A
A
K
NC
DESCRIPTION
Packaged in TO-220AC or D PAK, this device is
especially intended for use as an OR-ing diode in
fault tolerant power supply equipments.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
* :
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Tc = 115°C
δ
= 1
tp = 10 ms Sinusoidal
tp = 2 µs F = 1kHz
tp = 100 µs
tp = 1µs
Tj = 25°C
Parameter
Repetitive peak reverse voltage
2
D
2
PAK
STPS20L15G
Value
15
30
20
310
2
3
13500
- 65 to + 150
125
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
−
a
)
THERMAL RESISTANCES
Symbol
R
th (j-c)
Junction to case
Parameter
Value
1.6
Unit
°C/W
July 2003 - Ed: 3B
1/5
STPS20L15D/G
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
V
F
*
Tests Conditions
Reverse leakage
current
Forward voltage drop
Tests Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Pulse test :
* tp = 380
µs, δ
< 2%
Min.
Typ.
200
Max.
6
500
0.41
0.52
Unit
mA
V
V
R
= 15V
V
R
= 15V
I
F
= 19 A
I
F
= 40 A
I
F
= 19 A
I
F
= 40 A
0.28
0.42
0.33
0.50
To evaluate the maximum conduction losses use the following equation :
P = 0.18 x I
F(AV)
+ 8.10
-3
x I
F2(RMS)
Fig. 1:
Average forward power dissipation versus
Fig. 2:
Average forward current versus ambient
average forward current.
temperature (
δ
= 1).
8
7
6
5
4
3
2
1
0
IF(av) (A)
0
2
4
6
8
10
12
14
16
δ
=tp/T
T
PF(av)(W)
δ
= 0.1
δ
= 0.05
δ
= 0.2
δ
= 0.5
δ
=1
tp
18
20
22
22
20
18
16
14
12
10
8
6
4
2
0
IF(av)(A)
Rth(j-a)=Rth(j -c)
Rth(j-a)=15°C/W
Rth(j-a)=35°C/W
T
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
0
25
Fig. 3:
Normalized avalanche power derating
versus pulse duration.
P
ARM
(t
p
)
P
ARM
(1µs)
1
Fig. 4:
Normalized avalanche power derating
versus junction temperature.
1.2
1
P
ARM
(t
p
)
P
ARM
(25°C)
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
0
25
50
75
100
125
150
Fig. 5:
Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
250
200
150
100
50
0
1E-3
I
M
t
Tc=50°C
Fig. 6:
Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
δ
= 0.5
δ
= 0.2
δ
= 0.1
Tc=75°C
T
0.2
δ
=0.5
t(s)
1E-2
1E-1
Tc=110°C
tp (s)
Single pulse
δ
=tp/T
tp
1E+0
0.0
1.0E-4
1.0E-3
1.0E-2
1.0E-1
1.0E+0
2/5
STPS20L15D/G
Fig. 7:
Reverse leakage current versus reverse
voltage applied (typical values).
5E+2
1E+2
IR(mA)
5.0
Tj=100°C
Fig. 8:
Junction capacitance versus reverse
voltage applied (typical values).
C(nF)
F=1MHz
Tj=25°C
1E+1
1.0
1E+0
Tj=25°C
1E-1
VR(V)
0
2
4
6
8
10
12
14
16
VR(V)
0.1
1
2
5
10
20
Fig. 9:
Forward voltage drop versus forward
current (typical values).
IFM(A)
200.0
100.0
Tj=125°C
Fig. 10:
Forward voltage drop versus forward
current (maximum values).
200
100
IFM(A)
Tj=100°C
10.0
Tj=75°C
10
1.0
Tj=25°C
VFM(V)
0.1
1
1
1.2
1.4
1.6
VFM(V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
0.2
0.4
0.6
0.8
Fig. 11:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness : 35
µm).
(STPS20L15G only)
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
S(Cu) (cm²)
16
20
24
28
32
36
40
3/5
STPS20L15D/G
PACKAGE MECHANICAL DATA
D
2
PAK
DIMENSIONS
REF.
A
E
L2
C2
Millimeters
Min.
Max.
4.40
4.60
2.49
2.69
0.03
0.23
0.70
0.93
1.14
1.70
0.45
0.60
1.23
1.36
8.95
9.35
10.00
10.40
4.88
5.28
15.00
15.85
1.27
1.40
1.40
1.75
2.40
3.20
0.40 typ.
0°
8°
Inches
Min.
Max.
0.173
0.181
0.098
0.106
0.001
0.009
0.027
0.037
0.045
0.067
0.017
0.024
0.048
0.054
0.352
0.368
0.393
0.409
0.192
0.208
0.590
0.624
0.050
0.055
0.055
0.069
0.094
0.126
0.016 typ.
0°
8°
D
L
L3
A1
B2
B
G
A2
C
R
M
*
V2
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
* FLAT ZONE NO LESS THAN 2mm
FOOT PRINT DIMENSIONS
(in millimeters)
16.90
10.30
1.30
5.08
3.70
8.90
4/5
STPS20L15D/G
PACKAGE MECHANICAL DATA
TO-220AC
DIMENSIONS
REF.
H2
C
L5
ØI
L6
L2
D
L7
A
Millimeters
Min.
Max.
4.40
4.60
1.23
1.32
2.40
2.72
0.49
0.70
0.61
0.88
1.14
1.70
4.95
5.15
10.00
10.40
16.40 typ.
13.00
14.00
2.65
2.95
15.25
15.75
6.20
6.60
3.50
3.93
2.6 typ.
3.75
3.85
Inches
Min.
Max.
0.173
0.181
0.048
0.051
0.094
0.107
0.019
0.027
0.024
0.034
0.044
0.066
0.194
0.202
0.393
0.409
0.645 typ.
0.511
0.551
0.104
0.116
0.600
0.620
0.244
0.259
0.137
0.154
0.102 typ.
0.147
0.151
L9
F1
L4
F
G
M
E
A
C
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
Diam. I
Ordering type
STPS20L15D
STPS20L15G
STPS20L15G-TR
n
n
n
n
Marking
STPS20L15D
STPS20L15G
STPS20L15G
Package
TO-220AC
D
2
PAK
D
2
PAK
Weight
1.86 g.
1.48g.
1.48 g.
Base qty
50
50
1000
Delivery mode
Tube
Tube
Tape and reel
Cooling method: by conduction (C)
Recommended torque value: 0.55 m.N
Maximum torque value: 0.7 m.N
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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