74LVC1G02
SINGLE 2 INPUT POSITIVE NOR GATE
Description
The 74LVC1G02 is a single 2-input positive NOR gate with a
standard totem pole output. The device is designed for
operation with a power supply range of 1.65V to 5.5V. The
inputs are tolerant to 5.5V allowing this device to be used in a
mixed voltage environment. The device is fully specified for
partial power down applications using I
OFF
. The I
OFF
circuitry
Pin Assignments
(Top View)
A
B
1
2
4
5
Vcc
GND
3
Y
NEW PRODUCT
disables the output preventing damaging current backflow
when the device is powered down.
The gate performs the positive Boolean function:
SOT25 / SOT353
(Top View)
A
B
GND
1
2
3
6
5
4
Y
=
A
+
B
Features
•
•
•
•
•
•
or
Y
=
A
•
B
Vcc
NC
Y
Wide Supply Voltage Range from 1.65 to 5.5V
± 24mA Output Drive at 3.3V
CMOS low power consumption
I
OFF
Supports Partial-Power-Down Mode Operation
Inputs accept up to 5.5V
ESD Protection Tested per JESD 22
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)
•
•
•
•
Voltage Level Shifting
General Purpose Logic
Power Down Signal Isolation
Wide array of products such as.
o
PCs, networking, notebooks, netbooks, PDAs
o
Computer peripherals, hard drives, CD/DVD ROM
o
TV, DVD, DVR, set top box
o
Cell Phones, Personal Navigation / GPS
o
MP3 players ,Cameras, Video Recorders
DFN1410 (Note 2)
Applications
•
•
•
•
•
Latch-Up Exceeds 100mA per JESD 78, Class II
Range of Package Options
Direct Interface with TTL Levels
SOT25, SOT353, and DFN1410: Assembled with “Green”
Molding Compound (no Br, Sb)
Lead Free Finish/ RoHS Compliant (Note 1)
Notes:
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
2. Pin 2 and pin 5 of the DFN1410 package are internally connected.
74LVC1G02
Document number: DS32197 Rev. 2 - 2
1 of 14
www.diodes.com
October 2010
© Diodes Incorporated
74LVC1G02
SINGLE 2 INPUT POSITIVE NOR GATE
Absolute Maximum Ratings
(Note 3)
Symbol
ESD HBM
ESD MM
V
CC
V
I
V
o
V
o
I
IK
I
OK
I
O
T
J
T
STG
Notes:
Description
Human Body Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high impedance or I
OFF
state
Voltage applied to output in high or low state.
Input Clamp Current V
I
<0
Output Clamp Current
Continuous output current
Continuous current through Vdd or GND
Operating Junction Temperature
Storage Temperature
Rating
2
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to 6.5
-0.3 to V
CC
+0.5
-50
-50
±50
±100
-40 to 150
-65 to 150
Unit
KV
V
V
V
V
V
mA
mA
mA
mA
°C
°C
NEW PRODUCT
3. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.
74LVC1G02
Document number: DS32197 Rev. 2 - 2
3 of 14
www.diodes.com
October 2010
© Diodes Incorporated
74LVC1G02
SINGLE 2 INPUT POSITIVE NOR GATE
Recommended Operating Conditions
(Note 4)
Symbol
V
CC
Operating Voltage
Parameter
Operating
Data retention only
V
CC
= 1.65V to 1.95V
V
IH
High-level Input Voltage
V
CC
= 2.3V to 2.7V
V
CC
= 3V to 3.6V
V
CC
= 4.5V to 5.5V
V
CC
= 1.65V to 1.95V
V
IL
Low-level input voltage
V
CC
= 2.3V to 2.7V
V
CC
= 3V to 3.6 V
V
CC
= 4.5V to 5.5V
V
I
V
O
Input Voltage
Output Voltage
V
CC
= 1.65V
V
CC
= 2.3V
I
OH
High-level output current
V
CC
= 3V
V
CC
= 4.5V
V
CC
= 1.65V
V
CC
= 2.3V
I
OL
Low-level output current
V
CC
= 3V
V
CC
= 4.5V
Δt/ΔV
Input transition rise or fall
V
CC
= 3.3V ± 0.3V
rate
V
CC
= 5V ± 0.5V
Operating free-air
temperature
V
CC
= 1.8V ± 0.15V, 2.5V ± 0.2V
0
0
Min
1.65
1.5
0.65 X V
CC
1.7
2
0.7 X V
CC
0.35 X V
CC
0.7
0.8
0.3 X V
CC
5.5
V
CC
-4
-8
-16
-24
-32
4
8
16
24
32
20
10
5
-40
85
ºC
ns/V
mA
mA
V
V
Max
5.5
Unit
V
V
NEW PRODUCT
V
V
T
A
Notes:
4. Unused inputs should be held at Vcc or Ground.
74LVC1G02
Document number: DS32197 Rev. 2 - 2
4 of 14
www.diodes.com
October 2010
© Diodes Incorporated
74LVC1G02
SINGLE 2 INPUT POSITIVE NOR GATE
Electrical Characteristics
(All typical values are at Vcc = 3.3V, T
A
= 25°C)
Over recommended free-air temperature range (unless otherwise noted)
Symbol
Parameter
Test Conditions
I
OH
= -100μA
I
OH
= -4mA
V
OH
High Level Output
Voltage
I
OH
= -8mA
I
OH
= -16mA
I
OH
= -24mA
I
OH
= -32mA
I
OL
= 100μA
I
OL
= 4mA
V
OL
High-level Input Voltage
I
OL
= 8mA
I
OL
= 16mA
I
OL
= 24mA
I
OL
= 32mA
I
I
I
OFF
I
CC
ΔI
CC
C
i
θ
JA
Input Current
Power Down Leakage
Current
Supply Current
Additional Supply
Current
Input Capacitance
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
V
I
= 5.5V or GND
V
I
or V
O
= 5.5V
V
I
= 5.5V of GND
I
O
=0
Vcc
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
0 to 5.5V
0
1.65V to 5.5V
Min
V
CC
– 0.1
1.2
1.9
2.4
2.3
3.8
0.1
0.45
0.3
0.4
0.55
0.55
±5
± 10
10
μA
μA
μA
μA
pF
o
C/W
o
C/W
o
C/W
o
C/W
o
C/W
o
C/W
V
V
Typ.
Max
Unit
NEW PRODUCT
One input at V
CC
– 3V to 5.5V
0.6 V Other inputs
at V
CC
or GND
V
i
= V
CC
– or GND 3.3
SOT25
SOT353
DFN1410
SOT25
SOT353
DFN1410
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
500
4
204
371
430
52
143
190
θ
JC
Notes:
5. Test condition for SOT25, SOT353, and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVC1G02
Document number: DS32197 Rev. 2 - 2
5 of 14
www.diodes.com
October 2010
© Diodes Incorporated
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