D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
BAV23S Small Signal Diode
September 2006
BAV23S
Small Signal Diode
Connection Diagram
3
3
3
2
1
1
tm
L30
2
1
2
SOT-23
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
250
200
9.0
3.0
-55 to +150
150
Unit
V
mA
A
A
°C
°C
T
STG
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient*
Parameter
Value
350
357
Unit
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
t
rr
T
C
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Reverse Leakage
Reverse Recovery Time
Conditions
I
R
= 100µA
I
F
= 100mA
I
F
= 200mA
V
R
= 250V
V
R
= 250V, T
A
= 150°C
I
F
= I
R
= 30mA, I
RR
= 3.0mA,
R
L
= 100Ω
Min.
250
Max
1.0
1.25
100
100
50
Units
V
V
V
nA
µA
ns
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BAV23S Rev. E
BAV23S Small Signal Diode
Typical Performance Characteristics
(Continued)
P - POWER DISSIPATION (mW)
400
300
250
I
F
- CURRENT (mA)
0
25
50
75
100
125
o
300
200
150
100
50
0
200
100
150
0
25
50
75
100
125
o
150
T
A
- A M B IEN T TEM PE R A TU R E ( C )
T
A
- AMBIENT TEMPERATURE ( C)
Figure 9. Power Derating Curve
Figure 10. Average Rectified Current(I
O
)
vs Ambient Temperature(T
A
)
Figure 11. Reverse Recovery Time vs
Reverse Recovery Current (Irr)
3
BAV23S Rev. E
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
