®
T1620W
T1630W
16A SNUBBERLESS™ TRIAC
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
16
600 and 800
20 to 30
Unit
A
V
mA
G
A2
A1
DESCRIPTION
Based on ST’ Snubberless technology providing high
commutation performances, the T1620-600W/800W
& T1630-600W/800W are specially recommended for
use on inductive loads, thanks to their high commuta-
tion performances, such as vacuum cleaners, heating
regulation. They comply with UL standards (ref.
E81734).
A1
A2
G
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
TSM
I
2
t
dI/dt
V
DSM
/V
RSM
I
GM
P
G(AV)
T
stg
T
j
Parameter
RMS on-state current (Full sine wave)
Non repetitive surge peak on-state
current (Full cycle, T
j
initial = 25°C )
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100ns
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50Hz
F = 60Hz
F = 120 Hz
tp = 10ms
tp = 20µs
Tc= 80°C
t = 20ms
t = 16.7ms
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Value
16
200
218
220
50
V
DRM
/V
RRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
A
2
s
A/µs
V
A
W
°C
Unit
A
A
tp = 10 ms
March 2004 - Ed: 2
1/5
T820W / T830W
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
I
GT(1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
V
D
=V
DRM
R
L
=3.3kΩ Tj = 125°C
I
T
= 250mA
I
G
= 1.2I
GT
I - III
II
V
D
=67% V
DRM
Gate open Tj = 125°C
Without snubber Tj = 125°C
Test Conditions
V
D
=12V R
L
=30Ω
Quadrant
I-II-III
I-II-III
I-II-III
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MIN.
MIN.
35
70
80
300
8.5
T1620
20
1.3
0.2
50
80
100
500
11
T1630
30
Unit
mA
V
V
mA
mA
mA
V/µs
A/ms
STATIC CHARACTERISTICS
Symbol
V
TM(2)
V
TO(2)
R
d(2)
I
DRM
I
RRM
I
TM
= 22.5 A
Test Conditions
tp = 380µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX
Value
1.4
0.85
20
5
1
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Note 1:
Minimum IGT is guaranted at 5% of IGT max.
Note 2:
For both polarities of A2 referenced to A1.
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case (AC)
Parameter
Value
60
3.1
Unit
°C/W
°C/W
PRODUCT SELECTOR
Part Number
T1620-600W
T1620-800W
T1630-600W
T1630-800W
Voltage
600V
800V
600V
800V
Sensitivity
20 mA
20 mA
30 mA
30 mA
Type
Snubberless
Snubberless
Snubberless
Snubberless
Package
ISOWATT220AB
ISOWATT220AB
ISOWATT220AB
ISOWATT220AB
2/5
T820W / T830W
ORDERING INFORMATION
T
TRIAC SERIES
CURRENT: 16A
16
xx
-
x00
W
PACKAGE:
W: ISOWATT220AB
VOLTAGE:
600: 600V
800: 800V
SENSITIVITY:
20: 20mA
30: 30mA
OTHER INFORMATION
Part Number
T1620-600W
T1620-800W
T1630-600W
T1630-800W
Marking
T1620600W
T1620800W
T1630600W
T1630800W
Weight
2.3 g
2.3 g
2.3 g
2.3 g
Base quantity
50
50
50
50
Packing mode
Tube
Tube
Tube
Tube
Fig. 1:
Maximum power dissipation versus RMS
on-state current.
P(W)
18
α=180°
Fig. 2:
RMS on-state current versus case tem-
perature.
IT(RMS)(A)
18
α=180°
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
180°
16
14
12
10
8
6
α
IT(RMS)(A)
α
4
2
0
0
25
50
75
100
125
Tc(°C)
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1.E+00
Zth(j-c)
Fig. 4:
On-state characteristics (maximum val-
ues).
ITM(A)
100
1.E-01
Zth(j-a)
Tj=125°C
Tj=25°C
10
1.E-02
tp(s)
1.E-03
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1
0.0
0.5
1.0
VTM(V)
1.5
2.0
Tj max. :
Vto = 0.85 V
Rd = 20 mΩ
2.5
3.0
3/5
T820W / T830W
Fig. 5:
Surge peak on-state current versus number
of cycles.
ITSM(A)
220
200
180
160
140
120
100
80
60
40
20
0
1
10
100
1000
Repetitive
Tc=80°C
Non repetitive
Tj initial=25°C
t=20ms
Fig. 6:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponding value of I
2
t.
ITSM(A), I t (A s)
10000
Tj initial=25°C
dI/dt limitation:
50A/µs
2
2
1000
ITSM
I²t
Number of cycles
100
0.01
0.10
tp(ms)
1.00
10.00
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL[Tj=25°C]
3.0
2.5
2.0
1.5
IH & IL
Fig. 8:
Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical val-
ues).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
IGT
1.2
1.0
0.8
0.6
0.4
1.0
0.5
Tj(°C)
0.0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0.2
0.0
0.1
1.0
dV/dt (V/µs)
10.0
100.0
Fig. 9:
Relative variation of critical rate of decrease
of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj=125°C]
8
7
6
5
4
3
2
1
Tj(°C)
0
0
25
50
75
100
125
4/5
T820W / T830W
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
REF.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Diam
Millimeters
Min.
4.40
2.50
2.50
0.40
0.75
1.15
1.15
4.95
2.40
10.00
28.60
9.80
15.90
9.00
3.00
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
30.60
10.60
16.40
9.30
3.20
Inches
Min.
0.173
0.098
0.098
0.016
0.030
0.045
0.045
0.195
0.094
0.394
1.125
0.386
0.626
0.354
0.118
Max.
0.181
0.106
0.108
0.028
0.039
0.067
0.067
0.205
0.106
0.409
1.205
0.417
0.646
0.366
0.126
16.00 typ.
0.630 typ.
■
■
■
Cooling method : C
Recommended torque value : 0.55 m.N.
Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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