Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | TO-220F |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 70 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 25 W |
| Maximum power dissipation(Abs) | 25 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 9 MHz |
| VCEsat-Max | 1.7 V |
| KSB1017-O | KSB1017 | KSB1017-Y | KSB1017-R | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 4 A | 4 A | 4 A | 4 A |
| Collector-emitter maximum voltage | 80 V | 80 V | 80 V | 80 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 70 | 15 | 120 | 40 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 25 W | 25 W | 25 W | 25 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 9 MHz | 9 MHz | 9 MHz | 9 MHz |
| Is it Rohs certified? | incompatible | - | incompatible | incompatible |
| Parts packaging code | TO-220F | - | TO-220F | TO-220F |
| Contacts | 3 | - | 3 | 3 |
| JESD-609 code | e0 | - | e0 | e0 |
| Maximum operating temperature | 150 °C | - | 150 °C | 150 °C |
| Maximum power consumption environment | 25 W | - | 25 W | 25 W |
| Terminal surface | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| VCEsat-Max | 1.7 V | - | 1.7 V | 1.7 V |
| Is Samacsys | - | N | N | N |
| Base Number Matches | - | 1 | 1 | 1 |
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