KSR2103
KSR2103
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=22KΩ, R
2
=22KΩ)
• Complement to KSR1103
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
Marking
R1
B
R2
C
R5 3
PNP Epitaxial Silicon Transistor
E
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-50
-50
-10
-100
200
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
= -10µA, I
E
=0
I
C
= -100µA, I
B
=0
V
CB
= -40V, I
E
=0
V
CE
= -5V, I
C
= -5mA
I
C
= -10mA, I
B
= -0.5mA
V
CE
= -10V, I
C
= -5mA
V
CB
= -10V, I
E
=0
f=1.0MHz
V
CE
= -5V, I
C
= -100µA
V
CE
= -0.3V, I
C
= -5mA
15
0.9
22
1
-0.5
-3.0
29
1.1
200
5.5
56
-0.3
V
MHz
pF
V
V
KΩ
Min.
-50
-50
-0.1
Typ.
Max.
Units
V
V
µA
©2002 Fairchild Semiconductor Corporation
Rev. A3, November 2002
KSR2103
Typical Characteristics
-1000
-100
V
CE
= - 5V
R
1
= 22K
R
2
= 22K
V
CE
= - 0.3V
R
1
= 22 K
R
2
= 22 K
V
I
(on)[V], INPUT VOLTAGE
h
FE
, DC CURRENT GAIN
-10
-100
-1
-10
-1
-10
-100
-1000
-0.1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
280
I
C
[
µ
A], COLLECTOR CURRENT
-1000
P
C
[mW], POWER DISSIPATION
V
CE
= - 5V
R
1
= 22K
R
2
= 22K
240
200
160
-100
120
80
40
-10
-0.0
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
0
25
50
o
75
100
125
150
175
V
I
(OFF)[V], INPUT OFF VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A3, November 2002
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2
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I
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C™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
Analog electronics
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