D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
KSC2223
KSC2223
High Frequency Amplifier
•
•
•
•
Very small size to assure good space factor in Hybrid IC applications
f
T
=600MHz (TYP.) at I
C
=1mA
C
OB
=1pF (TYP.) at V
CB
=6V
NF=3dB (TYP.) at f=100MHz
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
20
4
20
150
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
C
c·rbb
NF
Parameter
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Time Constant
Noise Figure
Test Condition
V
CB=
30V, I
E
=0
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
C
=1mA
f=31.9MHz
V
CE
=6V, I
C
=1mA
f=100MHz, R
S
=50Ω
400
Min.
40
Typ.
90
0.1
1
600
12
3
Max.
0.1
180
0.3
V
pF
MHz
ps
dB
Units
µA
h
FE1
Classification
Classification
h
FE
R
40 ~ 80
Marking
O
60 ~ 120
Y
90 ~ 180
H5 O
h
FE
grade
©2001 Fairchild Semiconductor Corporation
Rev. A1, April 2001
KSC2223
Typical Characteristics
10
1000
V
CE
= 6V
Ic[mA], COLLECTOR CURRENT
I
B
= 80
µ
A
8
I
B
= 60
µ
A
6
I
B
= 50
µ
A
4
h
FE
, DC CURRENT GAIN
16
20
I
B
= 70
µ
A
100
I
B
= 40
µ
A
I
B
= 30
µ
A
I
B
= 20
µ
A
2
I
B
= 10
µ
A
0
0
4
8
12
10
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain 1
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
I
C
= 1mA
Ic = 10 I
B
h
FE
, DC CURRENT GAIN
1
V
BE
(sat)
100
0.1
V
CE
(sat)
10
1
10
100
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain 2
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
V
CE
= 6V
C
c.rbb
[ps], COLLECTOR-BASE TIME CONSTANT
1000
100
I
C
[mA], COLLECTOR CURRENT
V
CB
= 6V
f = 31.9MHz
100
10
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
0.1
1
10
100
V
BE
[V], BASE-EMITTER VOLTAGE
I
E
[mA], EMITTER CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Collector-Base Time Constant
©2001 Fairchild Semiconductor Corporation
Rev. A1, April 2001
KSC2223
Typical Characteristics
(Continued)
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
10000
24
V
CE
= 6V
f = 100MHz
20
V
CE
= 6V
NF[dB], NOISE FIGURE
16
1000
12
8
4
0
0.1
1
10
100
0.1
1
10
100
I
E
[mA], EMITTER CURRENT
I
E
[mA], EMITTER CURRENT
Figure 7. Noise Figure
Figure 8. Current Gain Bandwidth Product
10
200
f = 1MHz
180
C
ie
[pF], INPUT CAPACITANCE
C
ob
[pF], OUTPUT CAPACITANCE
P
D
[mW], POWER DISSIPATION
160
140
120
100
80
60
40
20
0
0
25
50
o
C
ie
(I
C
=0)
C
ob
(I
E
=0)
1
0.1
0.1
1
10
100
75
100
125
150
175
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
T
a
[ C], AMIBIENT TEMPERATURE
Figure 9. Input and Output Capacitance
Figure 10. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, April 2001
KSC2223
Package Demensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, April 2001
京公网安备 11010802033920号
EEWORLD
