Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | SOT-89 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | HIGH VOLTAGE |
| Maximum collector current (IC) | 0.8 A |
| Collector-emitter maximum voltage | 120 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 80 |
| JESD-30 code | R-PSSO-F3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 120 MHz |
| KSC2881 | KSC2881-O | KSC2881-Y | |
|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | SOT-89 | SOT-89 | SOT-89 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Other features | HIGH VOLTAGE | HIGH VOLTAGE | HIGH VOLTAGE |
| Maximum collector current (IC) | 0.8 A | 0.8 A | 0.8 A |
| Collector-emitter maximum voltage | 120 V | 120 V | 120 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 80 | 80 | 120 |
| JESD-30 code | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | FLAT | FLAT | FLAT |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 120 MHz | 120 MHz | 120 MHz |