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D45H11

Description
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size184KB,4 Pages
ManufacturerRectron
Environmental Compliance  
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D45H11 Overview

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3

D45H11 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)265
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
10 AMPERES COMPLEMENTARY
SILICON POWER TRANSISTORS 60,80 VOLTS
FEATURES
* ...for general purpose power amplification and switching
such as output or driver stages in applications such as
switching regulators, converter and power ampifiers.
* Low Collector-Emitter Saturation Voltage
VCE
(sat)
= 1.0 V (max.) @8.0A
Fast Switching Speeds
*
* Complementary Pairs Simplifies Designs
NPN
D44H SERIES
PNP
D45H SERIES
TO-220AB
.120 (3.04)
.100 (2.54)
.405 (10.28)
.380 (9.66)
.147 (3.73)
.142 (3.61)
.190 (4.82)
.160 (4.07)
.055 (1.39)
4
.045 (1.15)
.255 (6.47)
.235 (5.97)
.620 (15.75)
.570 (14.48)
.050 (1.27)
.000 (0.00)
1
.155 (3.93)
.110 (2.80)
.060 (1.52)
.045 (1.15)
2
3
.045 (1.15)
min.
.562 (14.27)
.500 (12.70)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
O
.035 (0.88)
.025 (0.64)
.105 (2.66)
.095 (2.42)
.210 (5.33)
.190 (4.83)
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
.025 (0.64)
.018 (0.46)
.110 (2.79)
.080 (2.04)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continutious
-Peak (Note 1)
Collector Power dissipation @T
C
=25
O
C
@T
A
=25
O
C
Thermal Resistance
Lead Temperature for Soldering Purposes:
1/8" from case for 5 sec.
Operating and Storage Junction Temperature Range
Notes: 1. Pulse Width < 6.0mS, Duty Cycle < 50%
2. "Fully RoHS Compliant", "100% Sn Plating (Pb-free)".
SYMBOL
V
CEO
V
EB
I
C
Pd
R
qJA
R
qJC
T
L
T
J,
Tstg
D44H or D45H
8
60
5
10
20
5.0
1.67
75
2.5
260
-55 to +150
o
10, 11
80
UNITS
V
V
A
W
C/W
o
C
C
o
VD 2007-11

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Description Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Maker Rectron Rectron Rectron Rectron
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 ROHS COMPLIANT PACKAGE-3
Contacts 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A 10 A 10 A
Collector-emitter maximum voltage 80 V 60 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40 20
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3 e3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 265 265 NOT SPECIFIED 265
Polarity/channel type PNP NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 40 MHz 50 MHz 50 MHz 50 MHz
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