DST3946DPJ
40V COMPLEMENTARY NPN/PNP SMALL SIGNAL TRANSISTOR IN SOT963
Features
BV
CEO
> 40V
I
C
= 200mA Collector Current
SOT963 Ultra Small Package of 1mm Footprint
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2
Mechanical Data
Case: SOT963
Case Material: Molded Plastic “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Plated Leads;
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.0027 grams (Approximate)
SOT963
6
5
4
Q1
Q2
1
2
3
Top View
Top View
Device Schematic
and Pin-Out
Ordering Information
(Note 4)
Product
DST3946DPJ-7
DST3946DPJ-7B
Notes:
Marking
T7
T7
Reel Size (inches)
7
7
Tape Width (mm)
8
8
Quantity per Reel
10,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T7
T7 = Product Type Marking Code
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
1 of 9
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March 2016
© Diodes Incorporated
DST3946DPJ
Absolute Maximum Ratings - NPN (Q1)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
40
6.0
200
Unit
V
V
V
mA
Absolute Maximum Ratings - PNP (Q2)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-40
-40
-5.0
-200
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Note:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol
P
D
R
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
ESD Rating
(Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Note:
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
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March 2016
© Diodes Incorporated
DST3946DPJ
Thermal Characteristics and Derating Information
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
JA
(t) = r(t) * R
JA
°C
R
JA
= 370°C/W
P(pk)
D = 0.02
t
1
0.01
D = 0.01
D = 0.005
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
0.4
10
100
1,000
1,000
P(pk), PEAK TRANSIENT POWER (W)
100
R
JA
(t) = r(t) * R
JA
°C
R
JA
= 370°C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
P
D
, POWER DISSIPATION (W)
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Single Pulse
0.3
10
0.2
1
0.1
0.1
0.00001
0.001
0.1
10
1,000
t
1
, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0
0
20
40
60
80 100 120 140 160
T
A
, AMBIENT TEMPERATURE (
C)
Fig. 3 Power Dissipation vs. Ambient Temperature
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
March 2016
© Diodes Incorporated
DST3946DPJ
Electrical Characteristics - NPN (Q1)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
BL
Min
60
40
6.0
40
70
100
60
30
0.65
1.0
0.5
100
1.0
300
Max
50
50
300
0.20
0.30
0.85
0.95
4.0
8.5
10
8.0
400
40
35
35
200
50
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10µA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
V
CC
= 3.0V, I
C
= 10mA,
V
BE(OFF)
= - 0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= -I
B2
= 1.0mA
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note:
7. Short duration pulse test used to minimize self-heating effect.
V
CE(SAT)
V
BE(SAT)
C
OBO
C
IBO
h
IE
h
RE
h
FE
h
OE
f
T
t
D
t
R
t
S
t
F
V
V
pF
pF
kΩ
x 10
-4
µs
MHz
ns
ns
ns
ns
0.14
I
B
= 2mA
400
I
B
= 1.6mA
I
B
= 1.4mA
I
B
= 1.2mA
I
B
= 1mA
I
B
= 1.8mA
°C
T
A
= 150°C
0.12
I
C
, COLLECTOR CURRENT (A)
V
CE
= 5V
0.10
0.08
0.06
h
FE
, DC CURRENT GAIN
300
°C
T
A
= 125°C
°C
T
A
= 85°C
I
B
= 0.8mA
I
B
= 0.6mA
I
B
= 0.4mA
200
°C
T
A
= 25°C
0.04
I
B
= 0.2mA
100
°C
T
A
= -55°C
0.02
0
0
0.1
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
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March 2016
© Diodes Incorporated
DST3946DPJ
1
I
C
/I
B
= 10
1
I
C
/I
B
= 20
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
°C
T
A
= 150°C
0.1
°C
T
A
= 150°C
°C
T
A
= 125°C
°C
T
A
= 85°C
°C
T
A
= 25°C
°C
T
A
= -55°C
0.1
°C
T
A
= 125°C
°C
T
A
= 85°C
°C
T
A
= -55°C
°C
T
A
= 25°C
0.01
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
0.01
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Gain = 10
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
°C
T
A
= 25°C
°C
T
A
= -55°C
1.2
V
CE
= 5V
1.0
0.8
°C
T
A
= -55°C
0.6
0.5
0.4
0.3
0.1
°C
T
A
= 85°C
0.6
°C
T
A
= 25°C
°C
T
A
= 150°C
T
A
= 150°C
°C
°C
T
A
= 125°C
0.4
°C
T
A
= 125°C
°C
T
A
= 85°C
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
°C
T
A
= 25°C Single,
Non-Repetitive Pulse
0.2
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
I
C
, COLLECTOR CURRENT (A)
1
P
W
= 1ms
s
P
W
= 100µs
DC
0.1
P
W
= 100ms
P
W
= 10ms
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER CURRENT (V)
Fig. 10 Safe Operation Area (NPN)
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
5 of 9
www.diodes.com
March 2016
© Diodes Incorporated
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