DST857BDJ
45V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT-963
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Complementary NPN Type Available (DST847BDJ)
Ultra Small Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
•
•
•
•
•
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads;
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (Approximate)
SOT-963
C1
C2
B1
B2
E1
Top View
Device Symbol
E2
Top View
Pin-Out
Ordering Information
Device
DST857BDJ-7
Notes:
Compliance
Standard
Marking
TB
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4.
For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-963
TB
TB = Product Type Marking Code
DST857BDJ
Document number: DS32037 Rev. 2 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
DST857BDJ
Absolute Maximum Rating
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 5)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-50
-45
-5.0
-100
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Note:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°
C/W
°
C
ESD rating
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Note:
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
DST857BDJ
Document number: DS32037 Rev. 2 - 2
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March 2015
© Diodes Incorporated
DST857BDJ
Thermal Characteristics and Derating Information
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 370°
C/W
P(pk)
D = 0.01
D = 0.005
D = 0.02
0.01
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
0.4
10
100
1,000
1,000
P(pk), PEAK TRANSIENT POWER (W)
Single Pulse
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 370°
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
P
D
, POWER DISSIPATION (W)
100
0.3
Note 3
10
0.2
1
0.1
0.1
0.00001
0.001
0.1
10
1,000
t
1
, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0
0
20
40
60
80 100 120 140 160
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 3 Power Dissipation vs. Ambient Temperature
DST857BDJ
Document number: DS32037 Rev. 2 - 2
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March 2015
© Diodes Incorporated
DST857BDJ
Typical Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
Note:
Symbol
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
Min
-50
-50
-45
-6
-
-
200
-
-
-
-
-600
100
-
Typical
-100
-90
-65
-8.5
-
340
330
-70
-300
-760
-885
-670
-715
340
2.0
Max
-
-
-
-
-15
-
470
-175
-500
-1,000
-1,100
-780
-850
-
-
Test Condition
I
C
= -10µA, I
B
= 0
I
C
= -10µA, I
B
= 0
I
C
= -1mA, I
B
= 0
I
E
= -1µA, I
C
= 0
V
CB
= -30V
I
C
= -10µA, V
CE
= -5V
-
I
C
= -2.0mA, V
CE
= -5V
I
C
= -10mA, I
B
= -0.5mA
mV
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
mV
I
C
= -100mA, I
B
= -5.0mA
I
C
= -2.0mA, V
CE
= -5V
mV
I
C
= -10mA, V
CE
= -5V
V
CE
= -5V, I
C
= -10mA,
MHz
f = 100MHz
pF V
CB
= -10V, f = 1.0MHz
Unit
V
V
V
V
nA
7. Measured under pulsed conditions. Pulse width
≤
300 µs. Duty cycle
≤
2%.
0.18
I
B
= -2mA
600
I
B
= -1.8mA
I
B
= -1.6mA
0.16
-I
C
, COLLECTOR CURRENT (A)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
I
B
= -1.4mA
I
B
= -1.2mA
550
500
T
A
= 150°C
V
CE
= 5V
T
A
= 125°C
-h
FE
, DC CURRENT GAIN
450
400
350
300
250
200
150
100
50
0
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
0
T
A
= -55°
C
T
A
= 25°C
T
A
= 85°C
I
B
= -1mA
I
B
= -0.8mA
I
B
= -0.6mA
I
B
= -0.4mA
I
B
= -0.2mA
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
DST857BDJ
Document number: DS32037 Rev. 2 - 2
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March 2015
© Diodes Incorporated
DST857BDJ
1
I
C
/I
B
= 10
1
I
C
/I
B
= 20
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0.01
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
0.01
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Gain = 10
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
V
CE
= -5V
1.2
1.0
0.8
T
A
= -55°
C
0.8
0.6
T
A
= 25°
C
T
A
= -55°
C
T
A
= 150°
C
0.6
T
A
= 25°
C
T
A
= 150°
C
0.4
T
A
= 125°
C
T
A
= 85°
C
0.4
T
A
= 85°
C
T
A
= 125°C
0.2
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.2
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DST857BDJ
Document number: DS32037 Rev. 2 - 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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