DST3904DJ
40V DUAL NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
•
V
CEO
= 40V
I
C
= 200mA
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
“Green” Device (Note 2)
Ultra Small Package
Mechanical Data
•
•
•
•
•
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (approximate)
NEW PRODUCT
SOT-963
Top View
Device Schematic
Ordering Information
Device
DST3904DJ-7
Notes:
Packaging
SOT-963
Shipping
10,000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
T8
T8 = Product Type Marking Code
DST3904DJ
Document number: DS32038 Rev. 2 - 2
1 of 6
www.diodes.com
April 2010
© Diodes Incorporated
DST3904DJ
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
40
6.0
200
Unit
V
V
V
mA
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
NEW PRODUCT
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes:
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 370°C/W
P(pk)
D = 0.02
t
1
0.01
D = 0.01
D = 0.005
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
0.4
10
100
1,000
1,000
P(pk), PEAK TRANSIENT POWER (W)
100
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 370°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
P
D
, POWER DISSIPATION (W)
Single Pulse
0.3
Note 3
10
0.2
1
0.1
0.1
0.00001
0.001
0.1
10
1,000
t
1
, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0
0
20
40
60
80 100 120 140 160
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 3 Power Dissipation vs. Ambient Temperature
DST3904DJ
Document number: DS32038 Rev. 2 - 2
2 of 6
www.diodes.com
April 2010
© Diodes Incorporated
DST3904DJ
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
60
40
6.0
⎯
⎯
40
70
100
60
30
⎯
0.65
⎯
⎯
⎯
1.0
0.5
100
1.0
300
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
50
50
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0
8.5
10
8.0
400
40
⎯
35
35
200
50
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 4)
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
t
d
t
r
t
s
t
f
V
V
pF
pF
kΩ
-4
x 10
⎯
μS
MHz
ns
ns
ns
ns
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤2%
0.14
I
B
= 2mA
400
I
B
= 1.6mA
I
B
= 1.4mA
I
B
= 1.2mA
I
B
= 1mA
I
B
= 1.8mA
T
A
= 150°C
V
CE
= 5V
0.12
I
C
, COLLECTOR CURRENT (A)
0.10
0.08
0.06
h
FE
, DC CURRENT GAIN
300
T
A
= 125°C
T
A
= 85°C
I
B
= 0.8mA
I
B
= 0.6mA
I
B
= 0.4mA
200
T
A
= 25°C
0.04
I
B
= 0.2mA
100
T
A
= -55°C
0.02
0
0
0.1
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
DST3904DJ
Document number: DS32038 Rev. 2 - 2
3 of 6
www.diodes.com
April 2010
© Diodes Incorporated
DST3904DJ
1
I
C
/I
B
= 10
1
I
C
/I
B
= 20
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
NEW PRODUCT
T
A
= 150°C
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.1
T
A
= 125°C
T
A
= 85°C
T
A
= -55°C
T
A
= 25°C
0.01
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
0.01
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Gain = 10
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
T
A
= 25°C
T
A
= -55°C
V
CE
= 5V
1.2
1.0
0.8
T
A
= -55°C
0.6
0.5
0.4
0.3
0.1
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
0.6
T
A
= 25°C
T
A
= 150°C
0.4
T
A
= 125°C
T
A
= 85°C
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
T
A
= 25°C Single,
Non-Repetitive Pulse
0.2
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
I
C
, COLLECTOR CURRENT (A)
1
P
W
= 1ms
P
W
= 100µs
DC
0.1
P
W
= 100ms
P
W
= 10ms
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER CURRENT (V)
Fig. 10 Safe Operation Area (NPN)
DST3904DJ
Document number: DS32038 Rev. 2 - 2
4 of 6
www.diodes.com
April 2010
© Diodes Incorporated
DST3904DJ
Package Outline Dimensions
D
e1
L
E1
E
e
b (6 places)
c
A
A1
SOT-963
Dim Min
Max Typ
A
0.40
0.50 0.45
A1
0
0.05
-
C
0.120 0.180 0.150
D
0.95
1.05 1.00
E
0.95
1.05 1.00
E1
0.75
0.85 0.80
L
0.05
0.15 0.10
b
0.10
0.20 0.15
e
0.35 Typ
e1
0.70 Typ
All Dimensions in mm
NEW PRODUCT
Suggest Pad Layout
C
C
Y1
Dimensions Value (in mm)
C
0.350
X
0.200
Y
0.200
Y1
1.100
Y (6X)
X (6X)
DST3904DJ
Document number: DS32038 Rev. 2 - 2
5 of 6
www.diodes.com
April 2010
© Diodes Incorporated
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