DST3906DJ
DUAL 40V PNP SURFACE MOUNT TRANSISTOR
Features
V
CEO
= -40V
I
C
= -200mA
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Ultra Small Package
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (Approximate)
Copper
SOT963
Top View
Device Schematic
Ordering Information
(Note 4)
Part Number
DST3906DJ-7
Notes:
Packaging
SOT963
Shipping
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
T9
T9 = Product Type Marking Code
DST3906DJ
Document number: DS32039 Rev. 3 - 2
1 of 8
www.diodes.com
June 2017
© Diodes Incorporated
DST3906DJ
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 5)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-40
-40
-5.0
-200
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°
C/W
°
C
ESD Ratings
(Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3B
C
DST3906DJ
Document number: DS32039 Rev. 3 - 2
2 of 8
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June 2017
© Diodes Incorporated
DST3906DJ
Thermal Characteristics and Derating Information
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
JA
(t)
r(t) * R
θJA
R
θJA
(t) =
= r(t) * R
JA
R
θJA
JA
= 370癈 /W
R
= 370℃/W
P(pk)
D = 0.02
t
1
0.01
D = 0.01
D = 0.005
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
10
100
1,000
1,000
P(pk), PEAK TRANSIENT POWER (W)
0.4
100
R
JA
(t) = r(t) * R
JA
R
JA
370癈 /W
R
θJA
=
=
370℃/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
P
D
, POWER DISSIPATION (W)
Single Pulse
0.3
Note 3
10
0.2
1
0.1
0.1
0.00001
0.001
0.1
10
1,000
t
1
, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0
0
20
40
60
80 100 120 140 160
T
A
, AMBIENT TEMPERATURE (
C)
Fig. 3 Power Dissipation vs. Ambient Temperature
DST3906DJ
Document number: DS32039 Rev. 3 - 2
3 of 8
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June 2017
© Diodes Incorporated
DST3906DJ
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CBO
I
BL
Min
-40
-40
-6
60
80
100
60
30
-0.65
2
0.1
100
3
300
Max
-50
-50
-50
300
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
35
35
225
75
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= -10µA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10µA, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3V
V
CB
= -30V, I
E
= 0
V
CE
= -30V, V
EB(OFF)
= -3V
I
C
= -100µA, V
CE
= -1V
I
C
= -1.0mA, V
CE
= -1V
I
C
= -10mA, V
CE
= -1V
I
C
= -50mA, V
CE
= -1V
I
C
= -100mA, V
CE
= -1V
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
V
CB
= -5V, f = 1MHz, I
E
= 0
V
EB
= -0.5V, f = 1MHz, I
C
= 0
V
CE
= -10V, I
C
= -1mA,
f = 1kHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
V
CC
= -3V, I
C
= -10mA,
I
B1
= -1mA
V
CC
= -3V, I
C
= -10mA,
I
B2
= 1mA
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(SAT)
V
BE(SAT)
C
OBO
C
IBO
h
ie
h
re
h
fe
h
oe
f
T
t
D
t
R
t
S
t
F
V
V
pF
pF
k
x 10
-4
µS
MHz
ns
ns
ns
ns
7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
DST3906DJ
Document number: DS32039 Rev. 3 - 2
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June 2017
© Diodes Incorporated
DST3906DJ
Typical Electrical Characteristics
0.20
I
B
= -2mA
I
B
= -1.6mA
I
B
= -1.8mA
(@T
A
= +25° unless otherwise specified.)
C,
400
350
T
A
= 150°
C
V
CE
= -5V
-I
C
, COLLECTOR CURRENT (A)
0.16
I
B
= -1.4mA
I
B
= -1.2mA
0.12
I
B
= -1mA
I
B
= -0.8mA
0.08
I
B
= -0.6mA
I
B
= -0.4mA
N
I
A
G
T
N
E
R
R
U
C
C
D
,
E
F
h
h
FE
, DC CURRENT GAIN
300
T
A
= 125°
C
250
200
T
A
= 85°
C
T
A
= 25°
C
150
100
50
0
0.1
0.04
I
B
= -0.2mA
T
A
= -55°
C
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I
C
/I
B
= 10
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
1
I
C
/I
B
= 20
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
N 0.1
O
I
T
A
R
U
A
T
S
A
(
E
S
C
V
-
0.01
1
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
R
E
T
T
I
M
E
-
R
O
T
C
E
L
L
O
C
,
T
)
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
R
E
T
T
I
M
E
-
R
O
T
C
E
L
L
O
C
,
)
T
)
V
(
E
G
A
T
L
O
V 0.1
N
O
I
T
A
R
U
A
T
S
A
(
E
S
C
V
-
0.01
0.1
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
Gain = 10
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Gain = 10
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
N
O
-
N
R
U
T
R
E
T
T
I
M
E
-
E
S
A
B
,
)
N
V
-
1.2
1.0
0.8
T
A
= -55°
C
0.6
T
A
= 25°
C
T
A
= 150°
C
0.4
T
A
= 85°
C
T
A
= 125°
C
O
(
E
B
0.2
0.1
)
V
(
E
G
A
T
L
O
V
N
O
I
T
A
R
U
T
A
S
R
E
T
T
I
M
E
-
E
S
A
B
,
)
T
V
-
1.2
1.0
0.8
T
A
= -55°
C
0.6
T
A
= 25°
C
T
A
= 150°
C
0.4
T
A
= 125°
C
T
A
= 85°
C
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
A
S
(
E
B
0.2
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
June 2017
© Diodes Incorporated
DST3906DJ
Document number: DS32039 Rev. 3 - 2
5 of 8
www.diodes.com
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