D45VH10 datasheet, PDF - EEWORLD Datasheet

D45VH10: DescriptionPower Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size77KB，2 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Other features	LEADFORM OPTIONS ARE AVAILABLE
Shell connection	COLLECTOR
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	83 W
Maximum power dissipation(Abs)	83 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Maximum off time (toff)	790 ns
Maximum opening time (tons)	300 ns
VCEsat-Max	1 V

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