D2221UKG4 datasheet, PDF - EEWORLD Datasheet

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D2221UKG4: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SO-8; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerSEMELAB; Environmental Compliance

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D2221UKG4 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SO-8

D2221UKG4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-MDSO-G8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-MDSO-G8
JESD-609 code	e4
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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TetraFET

D2221UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

7.5W – 12.5V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

PIN 5 – SOURCE

PIN 6 – GATE

PIN 7 – GATE

PIN 8 – SOURCE

SO8 PACKAGE

PIN 1 – SOURCE

PIN 2 – DRAIN

PIN 3 – DRAIN

PIN 4 – SOURCE

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

Dim.

4.06

5.08

1.27

0.51

3.56

4.06

1.65

0.76

0.51

1.02

45°

0°

7°

0.20

2.18

4.57

Tol.

±0.08

+0.25

-0.00

Min.

Max.

Min.

Max.

±0.08

Max.

±0.08

Inches

0.160

0.200

0.050

0.020

0.140

0.160

0.065

0.030

0.020

0.040

45°

0°

7°

0.008

0.086

0.180

Tol.

±0.003

+0.010

-0.000

Min.

Max.

Min.

Max.

±0.003

Max.

±0.003

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSS

D(sat)

stg

Semelab plc.

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

17.5W

40V

±20V

–65 to 150°C

200°C

Prelim. 2/98

D2221UKG4 Related Products

	D2221UKG4
Description	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SO-8
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-MDSO-G8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-MDSO-G8
JESD-609 code	e4
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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