DT115TKAT146 datasheet, PDF - EEWORLD Datasheet

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DT115TKAT146: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size59KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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DT115TKAT146 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN

DT115TKAT146 Parametric

Parameter Name	Attribute value
Maker	ROHM Semiconductor
Parts packaging code	SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA

Transistors

Digital transistors (built in resistor)

DTC115TH / DTC115TUA / DT115TKA / DTC115TSA

!Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors.

2) The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the

input, and parasitic effects are almost completely

eliminated.

3) Only the on / off conditions need to be set for

operation, making device design easy.

4) Higher mounting densities can be achieved.

External dimensions

(Units : mm)

DTC115TH

1.6

0.85

0.27

(1)

0.5 0.5

(3)

(2)

0.12

0.7

1.0

1.6

ROHM : EMT3H

EIAJ : SC-89

(1) Emitter

(2) Base

(3) Collector

DTC115TUA

(1)

0to0.1

0.65 0.65

0.7

0.3

(3)

1.25

2.1

0.15

Equivalent circuit

0.2

(2)

0.1to0.4

0to0.1

0.9

1.3

2.0

ROHM : UMT3

EIAJ : SC-70

Each lead has same dimensions

E : Emitter

C : Collector

B : Base

(1) Emitter

(2) Base

(3) Collector

DTC115TKA

0.4

(3)

(1)

1.6

2.8

0.15

0.3to0.6

0to0.1

0.8

0.95 0.95

(2)

ROHM : SMT3

EIAJ : SC-59

Each lead has same dimensions

(1) Emitter

(2) Base

(3) Collector

DTC115TSA

(15Min.)

3Min.

0.45

2.5

(1) (2) (3)

0.5 0.45

ROHM : SPT

EIAJ : SC-72

Taping specifications

(1) Emitter

(2) Collector

(3) Base

DT115TKAT146 Related Products

	DT115TKAT146	DTC115THT2L
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-89, 3 PIN
Maker	ROHM Semiconductor	ROHM Semiconductor
Parts packaging code	SC-59	SC-89
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-F3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	FLAT
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz

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