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2SA1955F

Description
General Purpose Amplifier Applications Switching and Muting Switch Application
CategoryDiscrete semiconductor    The transistor   
File Size120KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1955F Overview

General Purpose Amplifier Applications Switching and Muting Switch Application

2SA1955F Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.4 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JESD-30 codeR-PDSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
2SA1955F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955F
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: V
CE (sat)
(1) =
−15
mV (typ.)
@I
C
=
−10
mA/I
B
=
−0.5
mA
Large collector current: I
C
=
−400
mA (max)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−15
−12
−5
−400
−50
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
JEITA
TOSHIBA
2-2HA1A
Marking
Type Name
h
FE
Rank
Weight: 2.3 mg (typ.)
GA
1
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