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2SB907

Description
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size158KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SB907 Overview

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

2SB907 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage40 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)1000
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment15 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max1.5 V
Base Number Matches1
2SB907
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SB907
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
High DC current gain: h
FE (1)
= 2000 (min) (V
CE
=
−2
V, I
C
=
−1
A)
Low saturation voltage: V
CE (sat)
=
−1.5
V (max) (I
C
=
−2
A)
Complementary to 2SD1222.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−60
−40
−5
−3
−0.3
1.0
15
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
4.8 kΩ
300
EMITTER
1
2010-02-05

2SB907 Related Products

2SB907 2SB907_10
Description Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

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