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2SB1182/Q

Description
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size81KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SB1182/Q Overview

Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,

2SB1182/Q Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-T3
JESD-609 codee2
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment10 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.8 V
Base Number Matches1
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