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BC817-16

Description
500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size90KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BC817-16 Overview

500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC817-16 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionSOT-23, 3 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.3300 W
Transistor typeUniversal small signal
Minimum DC amplification factor60
Rated crossover frequency170 MHz
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Ideally Suited for Automated Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary PNP Types Available (BC807)
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Pin Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
C
B
E
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
45
5.0
800
1000
1000
Unit
V
V
mA
mA
mA
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Thermal Characteristics
Characteristic
Power Dissipation at T
SB
= 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
SB
R
θ
JA
T
J
, T
STG
Value
310
320
403
-65 to +150
Unit
mW
°C/W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
Min
100
160
250
60
100
170
100
Max
250
400
600
0.7
1.2
100
5.0
100
12
Unit
Test Condition
V
CE
= 1.0V, I
C
= 100mA
Characteristic (Note 2)
Current Gain Group -16
-25
-40
DC Current Gain
Current Gain Group -16
-25
-40
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
1.
2.
3.
4.
h
FE
V
V
nA
µA
nA
MHz
pF
V
CE
= 1.0V, I
C
= 300mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 1.0V, I
C
= 300mA
V
CE
= 45V
V
CE
= 25V, T
j
= 150°C
V
EB
= 4.0V
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
V
CB
= 10V, f = 1.0MHz
V
CE(SAT)
V
BE
I
CES
I
EBO
f
T
C
CBO
Device mounted on Ceramic Substrate 0.7mm; 2.5cm
2
area.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated

BC817-16 Related Products

BC817-16 BC817-xx-7-F BC817-16_09
Description 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3
Transistor polarity NPN NPN NPN
Maximum collector current 0.5000 A 0.5000 A 0.5000 A
Maximum Collector-Emitter Voltage 45 V 45 V 45 V
Processing package description SOT-23, 3 PIN SOT-23, 3 PIN SOT-23, 3 PIN
state TRANSFERRED TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
Terminal location pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single
Number of components 1 1 1
transistor applications switch switch switch
Transistor component materials silicon silicon silicon
Maximum ambient power consumption 0.3300 W 0.3300 W 0.3300 W
Transistor type Universal small signal Universal small signal Universal small signal
Minimum DC amplification factor 60 60 60
Rated crossover frequency 170 MHz 170 MHz 170 MHz
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