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FLD470

Description
N channel 40V MOSFET for automotive application TO220F: wide pin package (for high current)
CategoryDiscrete semiconductor    The transistor   
File Size315KB,8 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
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FLD470 Overview

N channel 40V MOSFET for automotive application TO220F: wide pin package (for high current)

FLD470 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSANKEN
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)400 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)140 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
http://www.sanken-ele.co.jp
SANKEN ELECTRIC
FLD470
Features
N channel 40V MOSFET for automotive application
TO220F: wide pin package (for high current)
Package
FM20
(TO220 Full Mold)
Nov. 2010
Applications
Automotive: EPS motor driver application
Automotive: Other motor driver and solenoid driver
application
Internal Equivalent Circuit
D(2)
Key Specifications
G(1)
S(3)
Absolute maximum ratings
(Ta=25°C)
Characteristic
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Maximum Drain to Source dv/dt 1
Peak diode recovery dv/dt 2
Peak diode recovery di/dt
Channel Temperature
Storage Temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
※1
P
D
E
AS
2
I
AS
dv/dt 1
2
dv/dt 2
3
di/dt
3
T
ch
T
stg
Rating
40
±20
±70
±140
35
(Tc=25℃)
400
25
0.3
1.0
100
150
-55½150
Unit
V
V
A
A
W
mJ
A
V/ns
V/ns
A/μs
※1
PW≦100μsec. duty cycle≦1%
※2
V
DD
=20V, L=1mH, I
L
=20A, unclamped, Rg=50Ω,See
Fig.1
※3
I
SD
=25A,See
Fig.2
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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