Medium power transistor (32V,
2A)
2SB1182 / 2SB1240
Features
1) Low V
CE(sat)
.
V
CE(sat)
=
0.5V
(Typ.)
(I
C
/I
B
=
2A
/
0.2A)
2) Complements 2SD1758 / 2SD1862.
Dimensions
(Unit : mm)
2SB1182
1.5
±
0.3
6.5
±
0.2
5.1
+0.2
−
0.1
2.3
+0.2
−
0.1
4.4
±
0.2
14.5
±
0.5
2SB1240
6.8
±
0.2
2.5
±
0.2
C0.5
0.5
±
0.1
5.5
+0.3
−0.1
9.5
±
0.5
0.9
1.5
Structure
Epitaxial planar type
PNP silicon transistor
0.65Max.
0.75
0.9
0.65
±
0.1
2.5
0.55
±
0.1
2.3
±
0.2 2.3
±
0.2
1.0
±
0.2
(1)
(2)
(3)
0.5
±
0.1
2.54 2.54
1.05
1.0
0.9
0.45
±
0.1
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM :
ATV
(1) Emitter
(2) Collector
(3) Base
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power 2SB1182
dissipation
2SB1240
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−40
−32
−5
−2
−3
10
1
150
−55
to 150
Unit
V
V
V
A(DC)
A (Pulse)
∗
1
W (Tc=25
°C
)
W
P
C
Tj
Tstg
∗
2
Junction temperature
Storage temperature
°C
°C
∗
1
∗
2
Single pulse, Pw=100ms
Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−40
−32
−5
−
−
−
120
−
−
Typ.
−
−
−
−
−
−0.5
−
100
50
Max.
−
−
−
−1
−1
−0.8
390
−
−
Unit
V
V
V
I
C
= −50μ
A
I
C
= −1mA
I
E
= −50μ
A
V
CB
= −20V
V
EB
= −4V
I
C
/I
B
= −2A/ −0.2A
V
CE
= −3V,
I
C
= −0.5A
V
CE
= −5V,
I
E
=0.5A,
f=100MHz
V
CB
= −10V,
I
E
=0A,
f=1MHz
Conditions
μ
A
μ
A
V
−
MHz
pF
∗
∗
∗
Measured using pulse current.
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○
2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.04 - Rev.C
2SB1182 / 2SB1240
Packaging
specifications and h
FE
Package
Code
Type
2SB1182
2SB1240
h
FE
QR
QR
−
Basic ordering unit (pieces)
TL
2500
Taping
TV2
2500
−
Data Sheet
h
FE
values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
Electrical
characteristic curves
V
CE
= −3V
COLLECTOR CURRENT : I
C
(mA)
−0.5
Ta=25°C
−
1.75mA
DC CURRENT GAIN : h
FE
−1000
Ta=100°C
25°C
−500
−40°C
−200
−100
−50
−20
−10
−5
−2
−1
COLLECTOR
CURRENT : I
C
(A)
−
2.5mA
−2
.25mA
500
V
CE
= −6V
−3V
−1V
Ta=25°C
−0.4
−
2mA
−
1.5mA
−
1.25mA
−
1mA
−
750
μ
A
−
500μA
200
−0.3
100
−0.2
50
−0.1
−
250μA
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0
−0.4
−0.8
−1.2
I
B
=0A
−1.6
−2
20
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector curren ( )
500
Ta=100°C
25°C
−25°C
200
V
CE
= −3V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
−500
Ta=25°C
−500
l
C
/l
B
=10
DC CURRENT GAIN : h
FE
−200
−200
−100
−50
100
−100
I
C
/I
B
=
50
50
Ta=100°C
25°C
−40°C
−50
20
10
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
−20
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
20
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current ( )
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
−1
I
C
/I
B
=10
−0.5
500
Ta
=
25°C
V
CE
= −5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
300
200
100
50
Cib
Ta
=
25°C
f
=
1MHz
I
E
=
0A
I
C
=
0A
Cob
200
100
−0.2
−0.1
−0.05
20
10
50
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLETOR CURRENT : I
C
(mA)
5
10
20
50
100 200
500 1000 2000
−0.5
−1
−2
−5
−10
−20 −30
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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