2SB1182D
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
TO-252
6. 50
0. 15
0. 10
2. 30
0. 51
0. 05
0. 10
FEATURES
The 2SB1182DX is designed for medium power amplifier application
0. 20
0. 10
5. 30
C
Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS Compliant Product
5
0. 51
0
0. 10 1. 20
9. 70
0. 75
0. 10
5
5
1. 60
B
O
C
E
0. 51
*
MAXIMUM RATINGS* T
A
=25 C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Pulse,Pw=100mS
Collector Dissipation
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
C
T
J
, Tstg
Value
-40
-32
-5
-2
-2
10
+150,-55~+150
Units
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
-40
-32
-5
-1
-1
82
-500
100
50
390
-800
V
MHz
pF
TYP
MAX
UNIT
V
V
V
uA
uA
Ic=-50µA, IE=0
Ic= -1mA,I
B
=0
I
E
= -50µA, I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-500mA
I
C
=-500mA,I
B
=-200mA
V
CE
=-5V,I
c
=500mA,f=100MHz
V
CB
=-10V,f=1MHz
CLASSIFICATION OF
Rank
Range
http://www.SeCoSGmbH.com
h
FE
P
82 - 180
Q
120 - 270
R
180 - 390
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
2. 70
MARKING : 1182
(With Date Code)
0. 15
0. 6
0
9
0. 80
0. 10
2. 30
0. 10
0. 60
2. 30
0. 10
0. 10
0. 20
5. 50
0. 10
2SB1182D
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
Electrical characteristic curves
01-Jun-2002 Rev. A
Page 2of 2
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