2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
Features
1) High breakdown voltage.(BV
CEO
=
160V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB
=
10V)
3) High transition frequency.(f
T
=
80MH
Z
)
4) Complements the 2SB1275 / 2SB1236A.
External dimensions
(Unit : mm)
2SD2211
1.0
1.5
0.4
(1)
4.0
2.5
0.5
3.0
0.5
(3)
1.5
0.4
1.5
4.5
1.6
(2)
ROHM : MPT3
EIAJ : SC-62
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SD1857A
Collector
power
dissipation
2SD2211
2SD1918
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
160
160
5
1.5
3
1
0.5
2
1
10
150
−55 ∼+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W
W
W
W(Tc=25°C)
°C
°C
2SD1918
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.4
0.65
2.3
∗1
∗2
∗3
0.9
1.0
0.5
0.5
1.5
2.5
9.5
2.3
0.8Min.
5.1
6.5
C0.5
Junction temperature
Storage temperature
ROHM : CPT3
EIAJ : SC-63
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
∗
1 Pw=200msec duty=1/2
∗
2
Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger
.
∗
3
When mounted on a 40 x 40 x 0.7mm ceramic board.
2SD1857A
6.8
2.5
0.9
0.65Max.
1.0
0.5
(1) (2) (3)
2.54 2.54
4.4
1.05
14.5
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
*
Denotes h
FE
2SD2211
MPT3
QR
DQ*
T100
1000
2SD1918
CPT3
QR
−
TL
2500
2SD1857A
ATV
PQ
−
TV2
2500
0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
2SD1857A
f
T
Cob
Min.
160
160
5
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
Max.
−
−
−
Unit
V
V
V
µA
µA
V
V
−
−
Conditions
I
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
120V
V
EB
=
4V
I
C
/I
B
=
1A/0.1A
I
C
/I
B
=
1A/0.1A
V
CE
/I
C
=
5V/0.1A
V
CE
=
5V , I
E
= −
0.1A , f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
1
1
2
1.5
390
270
−
−
∗
∗
Base-emitter saturation voltage
DC current
2SD2211,2SD1918
120
82
−
−
transfer ratio
Transition frequency
Output capacitance
80
20
MHz
pF
∗
Measured using pulse current.
Rev.A
1/3
2SD2211 / 2SD1918 / 2SD1857A
Transistors
Electrical characteristic curves
1.0
Ta=25°C
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
10
1000
V
CE
=5V
Ta=25°C
DC CURRENT GAIN : h
FE
0.8
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
A
10m
5
2
1
0.5
0.2
0.1
0.05
0.02
Ta=100°C
Ta=25°C
Ta=
−25°C
500
200
100
50
20
10
5
2
5V
V
CE
=10V
0.6
0.4
0.2
I
B
=1m
A
0
0
1
2
3
4
5
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain vs. collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1000
500
V
CE
=5V
Ta=100°C
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
I
C
/I
B
=20
10
Ta=25°C
10
5
2
1
0.5
V
BE(sat)
0.2
0.1
−25°C
V
CE(sat)
0.02 0.05
0.1
0.2
0.5
1
2
25°C
Ta=
−25°C
100°C
I
C
/I
B
=10
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
25°C
−25°C
0.05
0.02
0.01
0.01
5
10
5
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector current (
ΙΙ
)
Fig.5 Collector-emitter saturation voltage
vs. collector current
Fig.6 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
1000
TRANSITION FREQUENCY : f
T
(MHz)
COLLECTOR CURRENT : I
C
(A)
500
200
100
50
20
10
5
2
1
−1
−2
−5
−10
−20
−50
Ta=25°C
V
CE
=5V
1000
500
200
100
50
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
10
Ta=25°C
f=1MHz
I
E
=0A
5
2
1
500m
200m
100m
50m
20m
10m
5m
Ic
Max
(Pulse
∗
)
Pw
=1
0m
Ta=25°C
∗Single
nonrepetitive
pulse
=1
Pw
m
00
s
∗
s
∗
−100 −200
−500 −1000
20
50
100
2m
1m
Recommended land
0.1 0.2 0.5
2
5
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Gain bandwidth products vs. emitter current
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area (2SD2211)
D
C
10 20
50 100 200
500 1000
Rev.A
2/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
京公网安备 11010802033920号
EEWORLD
