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2SB1085E

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size124KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB1085E Overview

Transistor

2SB1085E Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1085
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SD1562
・Low
collector saturation voltage
APPLICATIONS
・Designed
for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
固电
IN
导½
Fig.1 simplified outline (TO-220) and symbol
Collector-emitter voltage
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-120
-120
-5
-1.5
-3.0
UNIT
V
V
V
A
A
W
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
T
C
=25℃
20
150
-55~150
Junction temperature
Storage temperature

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Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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