Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
80
80
5
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.2
−
120
7.5
Max.
−
−
−
0.5
0.5
0.5
390
−
−
Unit
V
V
V
I
C
=50µ
A
I
C
=2mA
I
E
=50µ
A
V
CB
=50V
V
EB
=4V
2SD1782K
2SD1782KFRA
Conditions
µ
A
µ
A
V
−
MHz
pF
I
C
/I
B
=500mA/50mA
V
CE
=3V,
I
C
=100mA
V
CE
=10V,
I
E
= −50mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
Packaging specifications and h
FE
Package
Code
Type
h
FE
Basic ordering
unit (pieces)
Taping
T146
3000
h
FE
values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
2SD1782KFRA
QR
2SD1782K
Electrical characteristic curves
500
COLLECTOR CURRENT : I
C
(mA)
V
CE
=
3V
COLLECTOR CURRENT : I
C
(A)
0.5
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
DC CURRENT GAIN : h
FE
Ta=100°C
25°C
−25°C
4.5mA
4.0mA
3.5mA
3.0mA
0.4
2.5mA
2.0mA
Ta=25°C
0.3
5.0mA
1000
500
Ta=100°C
25°C
−25°C
V
CE
=
3V
200
100
50
1.5mA
1.0mA
0.5mA
0.2
0.1
0
0
I
B
=0mA
1.6
2.0
20
0.4
0.8
1.2
10
1
2
5
10 20
50 100 200
5001000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics
Fig.3
DC current gain vs. collector
current
Rev.A
2/3
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
2SD1782KFRA
2SD1782K
1000
500
Ta=25°C
1000
500
l
C
/l
B
=10
1000
500
l
C
/l
B
=20
200
100
50
I
C
/I
B
=50
20
10
20
10
1
2
5
10 20
50 100 200 5001000
200
100
50
200
100
50
Ta=100°C
25°C
−25°C
Ta=100°C
25°C
−25°C
20
10
1
2
5
10 20
50 100 200 5001000
20
10
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4
Collector-emitter saturation voltage
vs. collector current ( )
Fig.5
Collector-emitter saturation voltage
vs. collector current ( )
Fig.6
Collector-emitter saturation voltage
vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
TRANSITION FREQUENCY : f
T
(MHz)
l
C
/l
B
=50
500
500
Ta
=
25°C
V
CE
=
10V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE : Cib
(pF)
1000
1000
1000
500
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
Cob
Cib
Ta
=
25°C
f
=
1MHz
I
E
=
0A
I
C
=
0A
200
100
50
Ta=100°C
25°C
−25°C
200
100
50
20
10
1
2
5
10 20
50 100 200
5001000
20
10
−1 −2
−5 −10 −20 −50 −100−200 −500−1000
EMITTER CURRENT : I
E
(mA)
10 20
50 100
COLLECTOR CURRENT : I
C
(mA)
Fig.7
Collector-emitter saturation voltage
vs. collector current ( )
Fig.8
Gain bandwidth product vs.
emitter current
Fig.9
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Microcontroller MCU
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