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1N4933G_2

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size65KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

1N4933G_2 Overview

SIGNAL DIODE

1N4933G_2 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
1N4933G - 1N4937G
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
Diffused Junction
Fast Switching for High Efficiency
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 3
Marking: Type Number
Weight: 0.35 grams (approximate)
DO-41
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Dim
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @ T
A
= 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage @ I
F
= 1.0A
Peak Reverse Current @ T
A
= 25°C
at Rated DC Blocking Voltage @ T
A
= 100°C
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
θ
JA
T
J,
T
STG
1N4933G
50
35
1N4934G
100
70
1N4935G
200
140
1.0
30
1.2
5.0
100
200
15
100
-65 to +150
1N4936G
400
280
1N4937G
600
420
Unit
V
V
A
A
V
μA
ns
pF
K/W
°C
Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Measured with I
F
0.5A, I
R
= 1.0A, I
rr
= 0.25A.
EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
DS27002 Rev. 7 - 2
1 of 3
www.diodes.com
1N4933G - 1N4937G
© Diodes Incorporated

1N4933G_2 Related Products

1N4933G_2 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G
Description SIGNAL DIODE SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE

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