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1N5822

Description
3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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1N5822 Overview

3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201

1N5822 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage40 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current150 A
1N5820 - 1N5822
3.0A SCHOTTKY BARRIER RECTIFIERS
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
A
B
A
C
D
DO-201AD
Dim
A
B
C
D
Min
25.40
7.20
1.20
4.80
Max
¾
9.50
1.30
5.30
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.1 grams (approx)
Mounting Position: Any
Marking: Type Number
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
L
= 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
@ T
L
= 75°C
Forward Voltage (Note 2)
Peak Reverse Current
at Rated DC Blocking Voltage (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Notes:
@ I
F
= 3.0A
@ I
F
= 9.4A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
R
qJA
R
qJL
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
1N5820
20
14
1N5821
30
21
3.0
80
1N5822
40
28
Unit
V
V
A
A
0.475
0.850
0.500
0.900
2.0
20
40
10
-65 to +125
0.525
0.950
V
mA
°C/W
°C
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration pulse test used to minimize self-heating effect.
3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm)
copper pad.
DS23003 Rev. 7 - 2
1 of 2
www.diodes.com
1N5820-1N5822
ã
Diodes Incorporated

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