Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1855
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SB1335
・Low
collector saturation voltage
APPLICATIONS
・For
low frequency power amplifier
applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
固电
导½
半
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
HAN
INC
SEM
GE
Open emitter
Open base
CONDITIONS
ON
IC
OR
DUT
VALUE
80
60
6
4
UNIT
V
V
V
A
W
℃
℃
Open collector
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
30
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=1mA; I
B
=0
I
C
=50μA; I
E
=0
I
E
=50μA; I
C
=0
I
C
=3A ;I
B
=0.3A
I
C
=3A ;I
B
=0.3A
V
CB
=80V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=0.5A; V
CE
=5V
60
MIN
60
80
6
2SD1855
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
V
V
μA
μA
固电
E
100-200
Transition frequency
Collector output capacitance
导½
半
F
h
FE
Classifications
D
60-120
HAN
INC
160-320
SEM
GE
f=1MHz ; V
CB
=10V
ON
IC
OR
DUT
8
90
320
MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1855
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
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