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2SB605L

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,700MA I(C),SPAKVAR
CategoryDiscrete semiconductor    The transistor   
File Size171KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SB605L Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,700MA I(C),SPAKVAR

2SB605L Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.7 A
ConfigurationSingle
Minimum DC current gain (hFE)135
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
surface mountNO
Nominal transition frequency (fT)120 MHz
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