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BAS16

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size87KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAS16 Overview

SIGNAL DIODE

BAS16 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
BAS16 / MMBD4148 / MMBD914
SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for Automated Insertion
For General Purpose Switching Applications
High Conductance
Qualified to AEC-Q101 Standards for High Reliability
Lead, Halogen and Antimony Free, RoHS Compliant
"Green' Device (Notes 3 and 4)
Mechanical Data
SOT-23
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.008 grams (approximate)
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0μs
@ t = 1.0s
I
FSM
Value
100
75
53
300
200
2.0
1.0
Unit
V
V
V
mA
mA
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
75
Max
0.715
0.855
1.0
1.25
1.0
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I
R
= 100μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
4.
I
R
C
T
t
rr
Device mounted on glass epoxy PCB 1.6” x 1.6” x 0.06”; mounting pad for the cathode lead min. 0.93in
2
.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured
prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
BAS16 / MMBD4148 / MMBD914
Document number: DS12003 Rev. 22 - 2
1 of 4
www.diodes.com
July 2009
© Diodes Incorporated

BAS16 Related Products

BAS16 BAS16_09 MMBD4148 MMBD914
Description SIGNAL DIODE SIGNAL DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
state ACTIVE ACTIVE DISCONTINUED ACTIVE
Diode type Signal diode Signal diode Signal diode Signal diode

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