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2SB605

Description
700mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size83KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SB605 Overview

700mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB605 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max0.35 V
Base Number Matches1

2SB605 Related Products

2SB605
Description 700mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? incompatible
Reach Compliance Code unknow
ECCN code EAR99
Maximum collector current (IC) 0.7 A
Collector-emitter maximum voltage 50 V
Configuration SINGLE
Minimum DC current gain (hFE) 50
JESD-30 code R-PSIP-T3
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form IN-LINE
Polarity/channel type PNP
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications AMPLIFIER
Transistor component materials SILICON
Nominal transition frequency (fT) 120 MHz
VCEsat-Max 0.35 V
Base Number Matches 1
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