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KBP005G_2

Description
2 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size57KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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KBP005G_2 Overview

2 A, SILICON, BRIDGE RECTIFIER DIODE

KBP005G - KBP10G
1.5A GLASS PASSIVATED BRIDGE RECTIFIER
Please click here to visit our online spice models database.
Features
Glass Passivated Die Construction
High Case Dielectric Strength of 1500V
RMS
Low Reverse Leakage Current
Surge Overload Rating to 40A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component Index, File
Number E94661
Lead Free Finish, RoHS Compliant (Note 2)
KBP
Dim
Min
14.25
10.20
14.25
3.56
0.76
Max
14.75
10.60
14.73
4.06
0.86
A
B
L
J
A
K
M
C
D
2.29 Typical
+
_
B
N
E
G
Mechanical Data
Case: KBP
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Terminals: Finish – Matte Tin. Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 1.52 grams (approximate)
H
G
C
D
P
H
J
K
L
1.17
1.42
2.8 X 45°
Chamfer
0.80
1.10
3.35
3.65
3° Nominal
2° Nominal
0.30
0.64
E
M
N
P
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 105°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage per element
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Total Capacitance per (Note 1)
Typical Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
T
R
θ
JC
T
J
, T
STG
KBP
005G
50
35
KBP
01G
100
70
KBP
02G
200
140
KBP
04G
400
280
1.5
40
1.1
5.0
500
20
18
-65 to +150
KBP
06G
600
420
KBP
08G
800
560
KBP
10G
1000
700
Unit
V
V
A
A
V
µA
pF
°C/W
°C
@ I
F
= 1.5A
@T
C
= 25°C
@ T
C
= 125°C
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
3. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
DS21203 Rev. 12 - 2
1 of 3
www.diodes.com
KBP005G-KBP10G
© Diodes Incorporated

KBP005G_2 Related Products

KBP005G_2 KBP02G KBP04G
Description 2 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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