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DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1843 is a Darlington connection transistor with on-chip
dumper diode in collector to emitter and zener diode in collector to
base. This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High DC current gain due to Darlington connection
• High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T(Ta = 25°C)
T
j
T
stg
Ratings
60±10
60±10
7.0
±1.0
±2.0
1.0
150
−55
to +150
Unit
V
V
V
A
A
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE2
**
h
FE2
**
V
CE(sat)
**
V
BE(sat)
**
t
ON
t
stg
t
f
Conditions
V
CB
= 40 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 2.0 V, I
C
= 0.2 A
V
CE
= 2.0 V, I
C
= 0.5 A
I
C
= 0.5 A, I
B
= 0.5 mA
I
C
= 0.5 A, I
B
= 0.5 mA
I
C
= 0.5 A, R
L
= 100
Ω
I
B1
=
−I
B2
= 0.1 mA, V
CC
= 50 V
MIN.
TYP.
MAX.
0.5
1.0″
30000
1.5
2.0
0.5
1.0
1.0
Unit
µ
A
mA
1000
2000
V
V
µ
s
µ
s
µ
s
* *Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
2000 to 5000
L
4000 to 10000
K
8000 to 30000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16200EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
Industrial Control Electronics
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