Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PML package
・High
speed
・High
breakdown voltage
・High
reliability
・Built
in damper diode
APPLICATIONS
・Color
TV horizontal deflection output
・Color
display horizontal deflection output.
PINNING
PIN
1
2
3
Base
Collector
DESCRIPTION
2SD1880
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
固电
导½
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
ANG
CH
IN
SEM
E
Open emitter
Open base
CONDITIONS
ON
IC
OR
DUT
VALUE
1500
800
6
8
30
70
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Open collector
Collector power dissipation
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1880
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
I
CES
h
FE-1
h
FE-2
V
F
t
f
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
Collector cut-off current
DC current gain
DC current gain
Diode forward voltage
CONDITIONS
I
C
=100mA ;I
B
=0
I
C
=6A ;I
B
=1.2A
I
C
=6A ;I
B
=1.2A
V
CB
=800V ;I
E
=0
V
EB
=4V ;I
C
=0
V
CE
=1500V
I
C
=1A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
I
EC
=8A
8
5
10
2
40
MIN
800
5
1.5
10
130
1.0
TYP.
MAX
UNIT
V
V
V
μA
mA
mA
固电
Fall time
导½
半
ANG
CH
IN
MIC
E SE
I
C
=6A;R
L
=33.3Ω
I
B1
=1.2A I
B2
=-2.4A;V
CC
=200V
DU
ON
OR
T
0.1
0.3
V
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1880
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1880
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
4
京公网安备 11010802033920号
EEWORLD
