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2SA1812T101/N

Description
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size117KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SA1812T101/N Overview

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

2SA1812T101/N Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)56
JESD-30 codeR-PSSO-F3
JESD-609 codee2
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN COPPER
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)12 MHz
VCEsat-Max1 V
Base Number Matches1
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