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IS61DDPB21M18A-333M3L

Description
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165
Categorystorage    storage   
File Size529KB,30 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance  
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IS61DDPB21M18A-333M3L Overview

DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165

IS61DDPB21M18A-333M3L Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instructionTBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density18874368 bit
Memory IC TypeDDR SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX18
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.89 V
Minimum supply voltage (Vsup)1.71 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width13 mm
IS61DDP2B21M18A
IS61DDP2B251236A
1Mx18, 512Kx36
18Mb DDR-IIP (Burst 2) CIO Synchronous SRAM
(2.0 Cycle Read Latency)
FEATURES
512Kx36 and 1Mx18 configuration available.
On-chip delay-locked loop (DLL) for wide data valid
window.
Common I/O read and write ports.
Synchronous pipeline read with self-timed late write
operation.
Double data rate (DDR) interface for read and write
input ports.
2.0 cycle read latency.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control
registering at rising edges only.
Two echo clocks (CQ and CQ#) that are delivered
simultaneously with data.
+1.8V core power supply and 1.5, 1.8V VDDQ, used
with 0.75, 0.9V VREF.
HSTL input and output levels.
Registered addresses, write and read controls, byte
writes, data in, and data outputs.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1
functions.
Byte write capability.
Fine ball grid array (FBGA) package:
13mmx15mm and 15mmx17mm body size
165-ball (11 x 15) array
Programmable impedance output drivers via 5x
user-supplied precision resistor.
ODT(On-Die Termination) feature is supported
optionally on Input clocks, Data input, and Control
signals.
ADVANCED INFORMATION
SEPTEMBER 2010
DESCRIPTION
The 18Mb IS61DDPB251236A and IS61DDPB21M18A are
synchronous, high-performance CMOS static random access
memory (SRAM) devices. These SRAMs have a common I/O
bus. The rising edge of K clock initiates the read/write
operation, and all internal operations are self-timed. Refer to
the
Timing Reference Diagram for Truth Table
for a
description of the basic operations of these DDR-IIP (Burst of
2) CIO SRAMs.
Read and write addresses are registered on alternating rising
edges of the K clock. Reads and writes are performed in
double data rate.
The following are registered internally on the rising edge of
the K clock:
Read/write address
Read enable
Write enable
Byte writes
Data-in for first burst addresses
Data-Out for second burst addresses
The following are registered on the rising edge of the K#
clock:
Byte writes
Data-in for second burst addresses
Data-Out for first burst addresses
Byte writes can change with the corresponding data-in to
enable or disable writes on a per-byte basis. An internal write
buffer enables the data-ins to be registered one cycle after
the write address. The first data-in burst is clocked one cycle
later than the write command signal, and the second burst is
timed to the following rising edge of the K# clock.
During the burst read operation, the data-outs from the first
bursts are updated from output registers of the third rising
edge of the K clock (starting 2.0 cycles later after read
command). The data-outs from the second burst are updated
with the third rising edge of the K# clock where read
command receives at the first rising edge of K.
The device is operated with a single +1.8V power supply and
is compatible with HSTL I/O interfaces.
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
4/29/2010
1
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