INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC2026
DESCRIPTION
·Low
Noise
NF= 3.0dB TYP. @ f= 500MHz
·High
Power Gain
G
pe
= 15dB TYP. @ f= 500MHz
·High
Gain Bandwidth Product
f
T
= 2.0GHz TYP.
APPLICATIONS
·Designed
for use in low noise amplifiers in the VHF~UHF
band.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
14
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current-Continuous
50
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.25
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2026
TYP.
MAX
UNIT
I
CBO
Collector Cutoff Current
V
CB
= 15V; I
E
= 0
0.1
μA
I
EBO
Emitter Cutoff Current
V
EB
= 2V; I
C
= 0
0.1
μA
h
FE
DC Current Gain
I
C
= 10mA ; V
CE
= 10V
25
200
f
T
Current-Gain—Bandwidth Product
I
C
= 10mA ; V
CE
= 10V
15
2.0
GHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V; f= 1.0MHz
0.75
1.1
pF
G
pe
Power Gain
V
CE
= 10 V,I
C
= 10mA; f= 500MHz
13
15
dB
NF
Noise Figure
V
CE
= 10 V,I
C
= 3mA; f= 500MHz;
R
G
= 50Ω
3
4
dB
isc Website：www.iscsemi.cn
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