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IDT7M6032S55CB

Description
SRAM Module, 16KX32, 71ns, CMOS
Categorystorage    storage   
File Size408KB,14 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

IDT7M6032S55CB Overview

SRAM Module, 16KX32, 71ns, CMOS

IDT7M6032S55CB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time71 ns
JESD-30 codeR-XDMA-T64
JESD-609 codee0
memory density524288 bit
Memory IC TypeSRAM MODULE
memory width32
Number of functions1
Number of terminals64
word count16384 words
character code16000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX32
Package body materialUNSPECIFIED
encapsulated codeDIP
Encapsulate equivalent codeDIP64,.9
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B (Modified)
Maximum standby current0.125 A
Maximum slew rate1.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

IDT7M6032S55CB Related Products

IDT7M6032S55CB IDT7M6032S35C IDT7M6032S35CB IDT7M6032S30C IDT7M6032S30CB IDT7M6032S45C IDT7M6032S45CB IDT7M6032S25C
Description SRAM Module, 16KX32, 71ns, CMOS SRAM Module, 16KX32, 51ns, CMOS SRAM Module, 16KX32, 51ns, CMOS SRAM Module, 16KX32, 43ns, CMOS SRAM Module, 16KX32, 43ns, CMOS SRAM Module, 16KX32, 61ns, CMOS SRAM Module, 16KX32, 61ns, CMOS SRAM Module, 16KX32, 38ns, CMOS
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code 3A001.A.2.C EAR99 3A001.A.2.C EAR99 3A001.A.2.C EAR99 3A001.A.2.C EAR99
Maximum access time 71 ns 51 ns 51 ns 43 ns 43 ns 61 ns 61 ns 38 ns
JESD-30 code R-XDMA-T64 R-XDMA-T64 R-XDMA-T64 R-XDMA-T64 R-XDMA-T64 R-XDMA-T64 R-XDMA-T64 R-XDMA-T64
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
memory density 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE
memory width 32 32 32 32 32 32 32 32
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 64 64 64 64 64 64 64 64
word count 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words
character code 16000 16000 16000 16000 16000 16000 16000 16000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 125 °C 70 °C 125 °C 70 °C 125 °C 70 °C 125 °C 70 °C
organize 16KX32 16KX32 16KX32 16KX32 16KX32 16KX32 16KX32 16KX32
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIP DIP DIP DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP64,.9 DIP64,.9 DIP64,.9 DIP64,.9 DIP64,.9 DIP64,.9 DIP64,.9 DIP64,.9
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.125 A 0.125 A 0.125 A 0.125 A 0.125 A 0.125 A 0.125 A 0.125 A
Maximum slew rate 1.05 mA 1.05 mA 1.05 mA 1.15 mA 1.15 mA 1.05 mA 1.05 mA 1.2 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY COMMERCIAL MILITARY COMMERCIAL MILITARY COMMERCIAL MILITARY COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) - - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)

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