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STA401A

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size509KB,2 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
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STA401A Overview

POWER TRANSISTOR

STA401A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSANKEN
package instructionSTA, SIP-10
Contacts10
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 0.05
Maximum collector current (IC)4 A
Collector-emitter maximum voltage70 V
ConfigurationCOMPLEX
Minimum DC current gain (hFE)1000
JESD-30 codeR-PSIP-T10
Number of components4
Number of terminals10
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
STA401A
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Ratings
60±10
60±10
6
4
8 (PW≤10ms, D
u
≤50%)
4 (T
a
=25°C)
20 (T
c
=25°C)
150
–40 to +150
NPN Darlington
With built-in avalanche diode
(T
a
=25°C)
External dimensions
D
• • •
STA (10-pin)
(T
a
=25°C)
Electrical characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
t
on
1.0
4.0
1.5
50
1000
2.0
V
60
min
Specification
typ
max
100
10
70
Unit
Unit
V
V
V
A
A
W
°C
°C
Conditions
V
CB
=50V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=10mA
V
CC
30V,
I
C
=3A,
I
B1
=–I
B2
=10mA
µ
A
mA
V
µ
s
µ
s
µ
s
t
stg
t
f
sEquivalent
circuit diagram
3
2
1
R
1
R
2
5
4
6
7
8
9
10
R
1
: 3kΩ typ R
2
: 150Ω typ
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
5
I
B
=
2.0
mA
1.0mA
0.8mA
0.6mA
0.5mA
h
FE
-I
C
Characteristics (Typical)
20000
10000
typ
h
FE
-I
C
Temperature Characteristics (Typical)
20000
10000
5000
25
°
C
25
°
C
0
–3
°
C
(V
CE
=4V)
(V
CE
=4V)
4
5000
I
C
(A)
3
h
FE
1000
500
h
FE
T
a
=1
2
0.4mA
1000
500
1
0.3mA
100
0
0
1
2
3
4
V
CE
(V)
50
0.05
100
0.1
0.5
1
4
0.05
0.1
0.5
1
4
I
C
(A)
I
C
(A)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
2
V
CE
(sat)-I
B
Characteristics (Typical)
3
I
C
-V
BE
Temperature Characteristics (Typical)
4
(I
C
/ I
B
=1000)
(V
CE
=–4V)
3
V
CE
(sat) (V)
V
CE
(sat) (V)
2
1
25°C
125°C
T
a
=–30
°C
I
C
(A)
2
1
I
C
=1A
I
C
=2A
I
C
=3A
I
C
=4
A
75
°
C
0
0.1
0.5
1
4
0
0.2
0
0.5
1
5
10
50
100
0
1
25
°
C
–30
°C
1
T
a
=
125
°
C
2
I
C
(A)
I
B
(mA)
V
BE
(V)
θ
j-a
-PW Characteristics
20
24
P
T
-T
a
Characteristics
10
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
Safe Operating Area (SOA)
1m
10
20
5
10
ms
s
θ
j–a
(°C / W)
P
T
(W)
5
16
12
50
×
50
×
2
25
×
50
×
2
Without Heatsink
I
C
(A)
100
×
100
×
2
1
0.5
8.0
1.0
4.0
Single Pulse
0.1
Without Heatsink
T
a
=25°C
0.5
1
5
10
50 100
500 1000
0
–40
0
50
100
150
0.05
3
5
10
50
100
PW (mS)
T
a
(°C)
V
CE
(V)
161

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