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IDT7164S25PG

Description
Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size108KB,11 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
Download Datasheet Parametric View All

IDT7164S25PG Overview

Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

IDT7164S25PG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeDIP
package instruction0.600 INCH, PLASTIC, DIP-28
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee3
length36.576 mm
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height4.699 mm
Maximum standby current0.015 A
Minimum standby current4.5 V
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width15.24 mm
CMOS Static RAM
64K (8K x 8-Bit)
Features
High-speed address/chip select access time
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 25/35ns (max.)
– Commercial: 15/20/25/35ns (max.)
Low power consumption
Battery backup operation – 2V data retention voltage
(L Version only)
Produced with advanced CMOS high-performance
technology
Inputs and outputs directly TTL-compatible
Three-state outputs
Available in 28-pin DIP, CERDIP and SOJ
Military product compliant to MIL-STD-883, Class B
IDT7164S/LS
IDT7164L/LL
Description
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K
x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS
technology.
Address access times as fast as 15ns are available and the circuit
offers a reduced power standby mode. When
CS
1
goes HIGH or CS
2
goes LOW, the circuit will automatically go to, and remain in, a low-
power stand by mode. The low-power (L) version also offers a battery
backup data retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible and
operation is from a single 5V supply, simplifying system designs. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-
pin 600 mil CERDIP.
Military grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
65,536 BIT
MEMORY ARRAY
GND
A
12
0
7
I/O
0
I/O CONTROL
I/O
7
CS
1
CS
2
OE
WE
CONTROL
LOGIC
2967 drw 01
FEBRUARY 2007
1
©2007 Integrated Device Technology, Inc.
DSC-2967/14
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