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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3900
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3900 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3900-ZP
PACKAGE
TO-263 (MP-25ZP)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 8.0 mΩ MAX. (V
GS
= 10 V, I
D
= 41 A)
R
DS(on)2
= 10 mΩ MAX. (V
GS
= 4.5 V, I
D
= 41 A)
•
Low C
iss
: C
iss
= 3500 pF TYP.
•
Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±82
±246
104
1.5
150
−55
to +150
141
37.5
141
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
3.
R
G
= 25
Ω,
T
ch(peak)
≤
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17175EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
MCU
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