2SA2087
Transistors
Power transistor (
−
30V,
−2
A)
2SA2087
!
Features
1) High speed switching. (Tf : Typ. : 20ns at I
C
=
−
2A)
2) Low saturation voltage, typically
(Typ. :
−
200mV at I
C
=
−
1.0A, I
B
=
−
100mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5875
!
External dimensions
(Unit : mm)
ATV
6.8
2.5
0.65Max.
1.0
0.5
2.54 2.54
0.9
(1) (2) (3)
(1) Emitter
(2) Collector
(3) Base
1.05
14.5
4.4
0.45
Taping specifications
!Applications
Low frequency amplifier
High speed switching
Abbreviated symbol :
A2087
!
Structure
PNP Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
Taping
TV2
2500
Code
Basic ordering unit (pieces)
2SA2087
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
DC
I
C
I
CP
P
C
Limits
−30
−30
−6
−2
−4
1.0
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=10ms
∗2
Each terminal mounted on a recommended land
Pulsed
Tj
Tstg
1/3
2SA2087
Transistors
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Min.
−30
−30
−6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
−1.0
−1.0
Unit
V
V
V
µA
µA
Condition
I
C
= −1mA
I
C
= −100µA
I
E
= −100µA
V
CB
= −20V
V
EB
= −4V
I
C
= −1.0A
I
B
= −100mA
V
CE
= −2V
I
C
= −100mA
V
CE
= −10V
I
E
=100mA
f=10MHz
V
CB
= −10V
I
E
=0mA
f=1MHz
I
C
= −2A
I
B1
= −200mA
I
B2
=200mA
V
CC
−25V
Collector-emitter saturation voltage
DC current gain
V
CE (sat)
h
FE
−
120
−
−200
−
−500
390
−
mV
−
∗
Transition frequency
f
T
350
MHz
Corrector output capacitance
Turn-on time
Storage time
Fall time
∗Non
repetitive pulse
C
ob
Ton
Tstg
Tf
−
−
−
−
25
25
100
20
−
−
−
−
pF
ns
ns
ns
∗
!
h
FE
RANK
Q
120−270
R
180−390
!
Electrical characteristic curves
−10
1000
10ms
1ms
500µs
COLLECTOR CURRENT : I
C
(A)
−1
100ms
DC
DC CURRENT GAIN : h
FE
SWITCHING TIME : (ns)
Ta=25°C
V
CC
= −25V
I
C
/ I
B
=10
/ 1
Tstg
1000
V
CE
= −2V
100
Ta=125°C
Ta=25°C
Ta=
−40°C
−0.1
100
Tf
Ton
10
−0.01
−0.001
−0.1
Single
non repetitive
Pulsed
−1
−10
−100
10
−0.01
−0.1
−1
−10
1
−0.001
−0.01
−0.1
−1
−10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Safe Operating Area
Fig.2 Switching Time
Fig.3 DC Current Gain vs.
Collector Current
(Ι)
−10
1000
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
−10
I
C
/ I
B
=10
/ 1
Ta=25°C
100
V
CE
= −5V
V
CE
= −3V
V
CE
= −2V
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
DC CURRENT GAIN : h
FE
−1
−1
10
−0.1
Ta=125°C
Ta=25°C
Ta=
−40°C
−0.1
I
C
/ I
B
=20/1
I
C
/ I
B
=10/1
1
−0.001
−0.01
−0.1
−1
−10
−0.01
−0.001
−0.01
−0.1
−1
−10
−0.01
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC Current Gain vs.
Collector Current
(ΙΙ)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current
(Ι)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current
(ΙΙ)
2/3
2SA2087
Transistors
−10
−10
1000
−1
−1
Ta=125°C
Ta=25°C
Ta=
−40°C
TRANSITION FREQUENCY : fT (MHz)
I
C
/ I
B
=10
/ 1
COLLECTOR CURRENT : I
C
(A)
V
CE
= −2V
BASE EMITTER SATURATION
VOLTAGE : V
BE (sat)
(V)
100
−0.1
Ta=125°C
Ta=25°C
Ta=
−40°C
−0.1
10
Ta=25°C
1
V
CE
= −10V
0.001
0.01
0.1
1
10
−0.01
−0.001
−0.01
−0.1
−1
−10
−0.01
0
−0.5
−1
−1.5
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
EMITTER CURRENT : I
E
(A)
Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current
Fig.8 Grounded Emitter
Propagation Characteristics
Fig.9 Transition Frequency
100
Ta=25°C
f=1MHz
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
10
1
−0.1
−1
−10
−100
BASE TO COLLECTOR VOLTAGE : V
CB
(V)
Fig.10 Collector Output Capacitance
!
Switching characteristics measurement circuits
R
L
=12.5Ω
I
B1
V
IN
P
W
I
B2
P
W
50µs
DUTY CYCLE
≤
1%
V
CC
−25V
I
C
I
B2
I
B1
BASE CURRENT
WAVEFORM
90%
COLLECTOR CURRENT
WAVEFORM
Ton
Tstg
Tf
I
C
10%
3/3
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