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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ448
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ448 is P-channel MOS Field Effect Transistor designed
for high voltage switching applications.
ORDERING INFORMATION
PART NUMBER
2SJ448
PACKAGE
Isolated TO-220
FEATURES
•
250 V rating high withstand voltage
•
Low on-state resistance:
R
DS(on)
= 2.0
Ω
MAX. (V
GS
= –10 V, I
D
= –2.0 A)
•
Low input capacitance:
C
iss
= 470 pF TYP.
•
Narrow gate cut-off voltage width:
V
GS(off)
=
−5.5
to
−4.0
V
•
Built-in gate protection diode
•
Full-mold package for easy mounting
5
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
5
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–250
V
V
A
A
W
W
°C
°C
A
mJ
m
30
m
4.0
m
16
30
2.0
150
–55 to +150
–4.0
80
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= –125 V, R
G
= 25
Ω,
V
GS
= –20
¡
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D10029EJ2V0DS00 (2nd edition)
Date Published July 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1995
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