2SA1900
Transistors
Medium power transistor (−50V,
−1A)
2SA1900
Features
1) Low saturation voltage, typically V
CE(sat)
=
−0.15V
at I
C
/
I
B
=
−500mA
/
−50mA
2) P
C
=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SC5053
Dimensions
(Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector current
Collector power dissipation
Collector power dissipation
Storage temperature
+
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
t
j
t
stg
Limits
−60
−50
−5
−1
−2
0.5
2
150
−55
to
+150
Unit
V
V
V
A
A (Pulse)
W
W
°C
°C
∗2
∗1
∗1
Pw=20ms, Duty=1/2
∗2
When mounted on a 40 40 0.7mm seramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−5
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
150
20
Max.
−
−
−
−0.1
−0.1
−0.4
270
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−40V
V
EB
=
−4V
I
C
/I
B
=
−500mA/−50mA
V
CE
/I
C
=
−3V/−0.5A
V
CE
=
−5V
, I
E
= 50mA , f=100MHz
V
CB
=
−10V
, I
E
= 0A , f=1MHz
Conditions
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pleces)
∗
Denotes
h
FE
2SA1900
MPT3
Q
AL
∗
T100
1000
Rev.C
1/2
2SA1900
Transistors
Electric characteristics curves
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
−1.0
−
8mA
−
7m
A
1000
Ta=25°C
−
6mA
Ta=25°C
−
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
−0.8
−
9mA
−
10mA
500
−
5mA
−
500
I
C
/I
B
=10
−
200
−
100
−
50
−
20
−
10
−
5
−
2
−
1
−1m
Ta=25°C
200
100
50
20
10
5
2
V
CE
=−3V
−
4mA
−0.6
−3mA
−0.4
−2mA
−0.2
I
B
=−1mA
0
0
−
1
−
2
−
3
−
4
−
5
1
−0.001
−0.01
−0.1
−1 −2
−10m
−100m
−1 −2
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded emitter output characteristics
Fig.2 DC current gain
vs. collector current
Fig.3 Collector-emitter saturation voltage
vs.collector current
TRANSITION FREQUENCY : f
T
(MHz)
500
200
100
50
20
10
5
2
1
1m 2m
Ta=25°C
V
CE
= −5V
COLLECTOR OUTPUT CAPACITANCE : C
ob(
(pF)
1000
1000
500
200
100
50
20
10
5
2
1
−0.1
COLLECTOR CURRENT : I
C
(A)
Ta=25°C
f=1MHz
I
E
=0A
−
10
−
5
−
2
−
1
−
0.5
D
Ta=25°C
∗Single
nonrepeatitive pulse
I
C Max.
(Pulse
∗
)
Pw
10
0m
=1
s
∗
0m
s
∗
−
0.2
−
0.1
−
0.05
−
0.02
C
5m 10m 20m
50m 0.1
0.2
0.5
1
−1
−10
−100
−
0.01
−0.1
−1
−10
−100
EMITTER CURRENT : I
E
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.4 Gain bandwith product
vs. emitter current
Fig.5 Collector output capacitance
vs. collector-base voltage
Fig.6 Safe operating area
Rev.C
2/2
Appendix
Notes
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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Appendix1-Rev2.0