EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1900T100

Description
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MPT3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size74KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SA1900T100 Overview

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MPT3, 3 PIN

2SA1900T100 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionMPT3, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSSO-F3
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
2SA1900
Transistors
Medium power transistor (−50V,
−1A)
2SA1900
Features
1) Low saturation voltage, typically V
CE(sat)
=
−0.15V
at I
C
/
I
B
=
−500mA
/
−50mA
2) P
C
=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SC5053
Dimensions
(Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector current
Collector power dissipation
Collector power dissipation
Storage temperature
+
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
t
j
t
stg
Limits
−60
−50
−5
−1
−2
0.5
2
150
−55
to
+150
Unit
V
V
V
A
A (Pulse)
W
W
°C
°C
∗2
∗1
∗1
Pw=20ms, Duty=1/2
∗2
When mounted on a 40 40 0.7mm seramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−5
120
Typ.
150
20
Max.
−0.1
−0.1
−0.4
270
Unit
V
V
V
µA
µA
V
MHz
pF
I
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−40V
V
EB
=
−4V
I
C
/I
B
=
−500mA/−50mA
V
CE
/I
C
=
−3V/−0.5A
V
CE
=
−5V
, I
E
= 50mA , f=100MHz
V
CB
=
−10V
, I
E
= 0A , f=1MHz
Conditions
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pleces)
Denotes
h
FE
2SA1900
MPT3
Q
AL
T100
1000
Rev.C
1/2

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2728  473  1952  614  1838  55  10  40  13  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号