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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1582
SWITCHING
N-CHANNEL MOS FET
DESCRIPTION
The 2SK1582, N-channel vertical type MOS FET, is a
switching device which can be driven directly by the output of
ICs having a 5 V power source.
The 2SK1582 has excellent switching characteristics and is
suitable for use as a high-speed switching device in digital
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
0.4
+0.1
–0.05
1.5
0.65
+0.1
–0.15
2
2.9 ±0.2
0.95
circuits.
3
0.4
+0.1
–0.05
FEATURES
• Directly driven by ICs having a 5 V power source.
• Not necessary to consider driving current because of its high
input impedance.
resistor.
0.95
1
0.3
Marking
1.1 to 1.4
0.16
+0.1
–0.06
• Possible to reduce the number of parts by omitting the bias
ORDERING INFORMATION
PART NUMBER
2SK1582
PACKAGE
SC-59 (Mini Mold)
1. Source
2. Gate
3. Drain
Marking: G15
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
30
±20
±200
±400
200
150
−55
to +150
V
V
mA
mA
mW
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13557EJ4V0DS00 (4th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
0 to 0.1
1991
RF/Wirelessly
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