2SD2164-M-AZ datasheet, PDF - EEWORLD Datasheet

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2SD2164-M-AZ: Description3A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3; CategoryDiscrete semiconductor The transistor; File Size128KB，6 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SD2164-M-AZ Overview

3A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3

2SD2164-M-AZ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	800
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	110 MHz
Base Number Matches	1

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DATA SHEET

SILICON POWER TRANSISTOR

2SD2164

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SD2164 is a single power transistor developed especially

for high h

. This transistor is ideal for simplifying drive circuits and

reducing power dissipation because its h

is as high as that of

Darlington transistors, but it is a single transistor.

In addition, this transistor features a small resin insulated

package, thus contributing to high-density mounting and mounting

cost reduction.

PACKAGE DRAWING (UNIT: mm)

FEATURES

• High h

and low V

CE(sat)

≅

1,300 TYP. (V

= 5.0 V, I

= 0.5 A)

CE(SAT)

≅

0.3 V TYP. (I

= 2.0 A, I

= 20 mA)

• Full mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

EBO

C(DC)

C(pulse)

B(DC)

= 25°C)

stg

Ratings

7.0

3.0

5.0

Note

0.5

2.0

150

−55

to +150

Unit

°C

(OHFWURGH &RQQHFWLRQ

%DVH

&ROOHFWRU

(PLWWHU

Note

≤

300

s, duty cycle

≤

10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15606EJ3V0DS00 (3rd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

2SD2164-M-AZ Related Products

	2SD2164-M-AZ	2SD2164-K-AZ	2SD2164-L-AZ
Description	3A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3	3A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3	3A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3
Is it Rohs certified?	conform to	conform to	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	3 A	3 A	3 A
Collector-emitter maximum voltage	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	800	1600	1000
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	110 MHz	110 MHz	110 MHz
Base Number Matches	1	1	1

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