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BAV99W_08

Description
0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size73KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAV99W_08 Overview

0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV99W_08 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-3
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structure系列 CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum repetitive peak reverse voltage75 V
Maximum average forward current0.1500 A
BAV99W
DUAL SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed
Ultra-small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 4 and 5)
Mechanical Data
SOT-323
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Polarity: See Diagram
Marking Information: See Page 2
Weight: 0.006 grams (approximate)
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0μs
@ t = 1.0s
I
FSM
Value
100
75
53
300
150
2.0
1.0
Unit
V
V
V
mA
mA
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
(Note 1)
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
75
0.55
Max
0.70
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I
R
= 2.5μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
I
R
C
T
t
rr
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAV99W
Document number: DS30045 Rev. 10 - 2
1 of 3
www.diodes.com
March 2008
© Diodes Incorporated

BAV99W_08 Related Products

BAV99W_08 BAV99W
Description 0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3
Number of components 2 2
Processing package description PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
state TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating NOT SPECIFIED NOT SPECIFIED
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure 系列 CONNECTED, CENTER TAP, 2 ELEMENTS 系列 CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials silicon silicon
Maximum power consumption limit 0.2000 W 0.2000 W
Diode type Signal diode Signal diode
Maximum reverse recovery time 0.0060 us 0.0060 us
Maximum repetitive peak reverse voltage 75 V 75 V
Maximum average forward current 0.1500 A 0.1500 A

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